Influence of channel silicon thickness and biological material permittivity on nTFET biosensor

dc.contributorUniversidade de São Paulo (USP)
dc.contributorUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2019-10-06T15:25:58Z
dc.date.accessioned2022-12-19T18:27:09Z
dc.date.available2019-10-06T15:25:58Z
dc.date.available2022-12-19T18:27:09Z
dc.date.created2019-10-06T15:25:58Z
dc.date.issued2018-10-26
dc.identifier33rd Symposium on Microelectronics Technology and Devices, SBMicro 2018.
dc.identifierhttp://hdl.handle.net/11449/187115
dc.identifier10.1109/SBMicro.2018.8511580
dc.identifier2-s2.0-85057397873
dc.identifier0496909595465696
dc.identifier0000-0002-0886-7798
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/5368153
dc.description.abstractThis work analyzes the effect of channel silicon thickness for different biological materials on n-type Tunnel-FET (nTFET) working as a biosensor. The bioelement materials are simulated using different dielectric permittivity materials (\varepsilon) localized at the drain underlap region. The results of this work show that using the ambipolar current of the Tunnel-FET it presents better sensitivity. The best results for TFETs biosensor were obtained for the drain underlap of 15 nm and channel silicon thickness of 5 nm.
dc.languageeng
dc.relation33rd Symposium on Microelectronics Technology and Devices, SBMicro 2018
dc.rightsAcesso aberto
dc.sourceScopus
dc.subjectBiosensor
dc.subjectPermittivity
dc.subjectSensitivity
dc.subjectSilicon Thickness
dc.subjectTFET
dc.subjectUnderlap
dc.titleInfluence of channel silicon thickness and biological material permittivity on nTFET biosensor
dc.typeActas de congresos


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