Dielectric relaxation and electrical conductivity of random oriented BiFeO3 thin films

dc.contributorUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2019-10-04T12:41:10Z
dc.date.accessioned2022-12-19T18:14:33Z
dc.date.available2019-10-04T12:41:10Z
dc.date.available2022-12-19T18:14:33Z
dc.date.created2019-10-04T12:41:10Z
dc.date.issued2019-06-11
dc.identifierFerroelectrics. Abingdon: Taylor & Francis Ltd, v. 545, n. 1, p. 111-118, 2019.
dc.identifier0015-0193
dc.identifierhttp://hdl.handle.net/11449/186087
dc.identifier10.1080/00150193.2019.1621695
dc.identifierWOS:000482905400014
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/5367139
dc.description.abstractComplex impedance and electric modulus spectroscopies were used to investigate the dielectric relaxation and conductivity of random oriented BiFeO3 thin films. Thermally activated charge transport models yielded activation energies of eV, which is consistent with an electrical conduction dominated by oxygen vacancies. The non-Debye behavior of impedance and electric modulus relaxations were modeled by Cole-Cole functions. Results suggest a coexistence of components from both long-range and localized relaxation in the studied BiFeO3 films dominated by grain boundaries. The dielectric relaxation induced by electric field does not follow the Arrhenius formalism.
dc.languageeng
dc.publisherTaylor & Francis Ltd
dc.relationFerroelectrics
dc.rightsAcesso aberto
dc.sourceWeb of Science
dc.subjectBismuth ferrite
dc.subjectthin films
dc.subjectdielectric relaxation
dc.titleDielectric relaxation and electrical conductivity of random oriented BiFeO3 thin films
dc.typeArtículos de revistas


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