dc.contributorNeli, Roberto Ribeiro
dc.contributorRocha, Fabio Dallavecchia
dc.contributorStaniszewski, Louisie Aristides
dc.contributorNeli, Roberto Ribeiro
dc.creatorSilva, Matheus Vidoti da
dc.date.accessioned2020-11-09T19:20:18Z
dc.date.accessioned2022-12-06T14:49:06Z
dc.date.available2020-11-09T19:20:18Z
dc.date.available2022-12-06T14:49:06Z
dc.date.created2020-11-09T19:20:18Z
dc.date.issued2018-06-18
dc.identifierSILVA, Matheus Vidoti da. Tecnologias em sistemas de circuitos integrados. 2018. Trabalho de Conclusão de Curso (Bacharelado em Engenharia Eletrônica) – Universidade Tecnológica Federal do Paraná, Campo Mourão, 2018.
dc.identifierhttp://repositorio.utfpr.edu.br/jspui/handle/1/6052
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/5256354
dc.description.abstractThe crescent semiconductor market aims more and more researches at it’s main technology, CMOS (Complementary metal-oxide-semiconductor). This paper is a literature review based on the databases IEEE and Science Direct. The Moore’s Law is presented and its end is questioned. Also, the consequences that limit CMOS transistors scaling are discussed, which would be approximately 20 nm for the gate length. Lastly, new technologies that have a potential to overcome CMOS technologies, as the CNTFET (Carbon nanotube field-effect transistor) and SpinFET (Spin field-effect transistor), are presented.
dc.publisherUniversidade Tecnológica Federal do Paraná
dc.publisherCampo Mourao
dc.publisherBrasil
dc.publisherDepartamento Acadêmico de Eletrônica
dc.publisherEngenharia Eletrônica
dc.publisherUTFPR
dc.rightsembargoedAccess
dc.subjectSemicondutores complementares de óxido metálico
dc.subjectCircuitos integrados
dc.subjectTransistores
dc.subjectSemicondutores
dc.subjectMetal oxide semiconductors, Complementary
dc.subjectIntegrated circuits
dc.subjectTransistors
dc.subjectSemiconductors
dc.titleTecnologias em sistemas de circuitos integrados
dc.typebachelorThesis


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