| dc.creator | Luiggi, Ney José | |
| dc.creator | Gómez, Marisol | |
| dc.date | 2011-03-22 | |
| dc.date.accessioned | 2022-11-04T22:56:28Z | |
| dc.date.available | 2022-11-04T22:56:28Z | |
| dc.identifier | https://produccioncientificaluz.org/index.php/ciencia/article/view/8841 | |
| dc.identifier.uri | https://repositorioslatinoamericanos.uchile.cl/handle/2250/5129209 | |
| dc.description | The incidence of different approaches to the Fermi surface of pure indium, indium-thallium and indium-lead diluted alloys on the residual electrical resistivity has been evaluated in the pseudopotential model. Fermi surface, iterative transport relaxation time and correlated parameters are evaluated in the 8-OPW scheme and all transport integrals are numerically executed using the method of finite elements. The modified Heine-Animalu- Abarenkov scattering potential was used. The particular effects of the scattering of the conduction electrons on the second-zone hole and the third-zone electron β-arm for each Fermi surface (FS) considered were tested, the contribution of the scattering in the second-zone being dominant over other contributions. Our results are in agreement with the experimental ones when the relativistic FS approach is used. | es-ES |
| dc.format | application/pdf | |
| dc.language | spa | |
| dc.publisher | Facultad Experimental de Ciencias de la Universidad del Zulia | es-ES |
| dc.relation | https://produccioncientificaluz.org/index.php/ciencia/article/view/8841/8831 | |
| dc.rights | Derechos de autor 2016 Ciencia | es-ES |
| dc.source | Ciencia; Vol. 6 Núm. 1 | es-ES |
| dc.source | 1315-2076 | |
| dc.subject | electrical resistivity | es-ES |
| dc.subject | electronic structure | es-ES |
| dc.subject | indium diluted alloys | es-ES |
| dc.title | Effect of the electronic structure on the electrical resistivity of Indium-Lead and Indium-Thallium diluted alloys | es-ES |
| dc.type | info:eu-repo/semantics/article | |
| dc.type | info:eu-repo/semantics/publishedVersion | |
