Stochastic approach to the smart quantum confinement model in porous silicon

dc.creatorRamírez Porras, Arturo
dc.creatorWeisz, S. Z.
dc.date.accessioned2010-07-23T22:18:27Z
dc.date.accessioned2022-10-20T00:14:36Z
dc.date.available2010-07-23T22:18:27Z
dc.date.available2022-10-20T00:14:36Z
dc.date.created2010-07-23T22:18:27Z
dc.date.issued2002
dc.identifierhttp://dx.doi.org/10.1016/S0039-6028(02)01963-5
dc.identifierhttps://hdl.handle.net/10669/322
dc.identifier10.1016/S0039-6028(02)01963-5
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/4531175
dc.description.abstractA model that encompasses two approaches to explain the photoluminescence in p-type porous silicon is proposed. The model considers a stochastic distribution of nanocrystallite sizes within the porous matrix and explain the luminescence emission of air-exposed specimens in terms of the presence of Si=O and Si=H bonds. Fitting of experimental data is performed to extract size-related statistical parameters. The results are in good agreement with the band-to-band and localized state-to-band transition theoretical framework.
dc.languageen_US
dc.publisherSurface Science 515 (2002) L509-L513
dc.subjectModelo semiempírico
dc.subjectMétodos electroquímicos
dc.subjectFotoluminiscencia
dc.subjectSilicio
dc.subjectÓxido de Silicio
dc.subjectPotencial de pozo
dc.subjectSuperficies semiconductoras
dc.titleStochastic approach to the smart quantum confinement model in porous silicon
dc.typeartículo científico


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