dc.creatorHaberkorn, Nestor Fabian
dc.creatorXu, Mingyu
dc.creatorMeier, William Richard
dc.creatorSuarez, Sergio Gabriel
dc.creatorBud´ko, Sergey
dc.creatorCanfield, Paul
dc.date.accessioned2021-11-12T16:53:30Z
dc.date.accessioned2022-10-15T15:01:54Z
dc.date.available2021-11-12T16:53:30Z
dc.date.available2022-10-15T15:01:54Z
dc.date.created2021-11-12T16:53:30Z
dc.date.issued2020-01
dc.identifierHaberkorn, Nestor Fabian; Xu, Mingyu; Meier, William Richard; Suarez, Sergio Gabriel; Bud´ko, Sergey; et al.; Enhancement of critical current density in CaKFe4As4 single crystals through 3 MeV proton irradiation; IOP Publishing; Superconductor Science And Technology; 33; 2; 1-2020; 1-20
dc.identifier0953-2048
dc.identifierhttp://hdl.handle.net/11336/146799
dc.identifierCONICET Digital
dc.identifierCONICET
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/4400025
dc.description.abstractWe study the influence of random point disorder on the vortex dynamics and critical current densities J c of CaKFe4As4 single crystals by performing magnetization measurements. Different samples were irradiated with a proton (p) beam at constant energy of 3 MeV to fluencies from 2 × 1015 p cm-2 to 4 1016 p cm-2. The results show the addition of extrinsic random point disorder enhances the J c values at low and intermediate temperatures over the entire range of magnetic fields applied. The optimum pinning enhancement is achieved with a proton fluence of 3 × 1016 p cm-2, increasing J c at 5 K by factors ≈5 and 14 at self-field and μ 0 H = 3 T, respectively. We analyze the vortex dynamics using the collective creep theory. The enhancement in J c matches with a systematic reduction in the flux creep relaxation rates as a consequence of a gradual increase in the collective pinning energy U 0. The substantial increment in J c produced by random point disorder, reaching values of 9 MA cm-2 at 5 K and self-field, makes CaKFe4As4 a promising material for applications based on current carrying capacity at high magnetic fields.
dc.languageeng
dc.publisherIOP Publishing
dc.relationinfo:eu-repo/semantics/altIdentifier/url/https://iopscience.iop.org/article/10.1088/1361-6668/ab5f4b
dc.relationinfo:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1088/1361-6668/ab5f4b
dc.rightshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.rightsinfo:eu-repo/semantics/restrictedAccess
dc.subjectCRITICAL CURRENT DENSITIES
dc.subjectIRON BASED SUPERCONDUCTORS
dc.subjectIRRADIATION
dc.titleEnhancement of critical current density in CaKFe4As4 single crystals through 3 MeV proton irradiation
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:ar-repo/semantics/artículo
dc.typeinfo:eu-repo/semantics/publishedVersion


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