dc.creator | Haberkorn, Nestor Fabian | |
dc.creator | Xu, Mingyu | |
dc.creator | Meier, William Richard | |
dc.creator | Suarez, Sergio Gabriel | |
dc.creator | Bud´ko, Sergey | |
dc.creator | Canfield, Paul | |
dc.date.accessioned | 2021-11-12T16:53:30Z | |
dc.date.accessioned | 2022-10-15T15:01:54Z | |
dc.date.available | 2021-11-12T16:53:30Z | |
dc.date.available | 2022-10-15T15:01:54Z | |
dc.date.created | 2021-11-12T16:53:30Z | |
dc.date.issued | 2020-01 | |
dc.identifier | Haberkorn, Nestor Fabian; Xu, Mingyu; Meier, William Richard; Suarez, Sergio Gabriel; Bud´ko, Sergey; et al.; Enhancement of critical current density in CaKFe4As4 single crystals through 3 MeV proton irradiation; IOP Publishing; Superconductor Science And Technology; 33; 2; 1-2020; 1-20 | |
dc.identifier | 0953-2048 | |
dc.identifier | http://hdl.handle.net/11336/146799 | |
dc.identifier | CONICET Digital | |
dc.identifier | CONICET | |
dc.identifier.uri | https://repositorioslatinoamericanos.uchile.cl/handle/2250/4400025 | |
dc.description.abstract | We study the influence of random point disorder on the vortex dynamics and critical current densities J c of CaKFe4As4 single crystals by performing magnetization measurements. Different samples were irradiated with a proton (p) beam at constant energy of 3 MeV to fluencies from 2 × 1015 p cm-2 to 4 1016 p cm-2. The results show the addition of extrinsic random point disorder enhances the J c values at low and intermediate temperatures over the entire range of magnetic fields applied. The optimum pinning enhancement is achieved with a proton fluence of 3 × 1016 p cm-2, increasing J c at 5 K by factors ≈5 and 14 at self-field and μ 0 H = 3 T, respectively. We analyze the vortex dynamics using the collective creep theory. The enhancement in J c matches with a systematic reduction in the flux creep relaxation rates as a consequence of a gradual increase in the collective pinning energy U 0. The substantial increment in J c produced by random point disorder, reaching values of 9 MA cm-2 at 5 K and self-field, makes CaKFe4As4 a promising material for applications based on current carrying capacity at high magnetic fields. | |
dc.language | eng | |
dc.publisher | IOP Publishing | |
dc.relation | info:eu-repo/semantics/altIdentifier/url/https://iopscience.iop.org/article/10.1088/1361-6668/ab5f4b | |
dc.relation | info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1088/1361-6668/ab5f4b | |
dc.rights | https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ | |
dc.rights | info:eu-repo/semantics/restrictedAccess | |
dc.subject | CRITICAL CURRENT DENSITIES | |
dc.subject | IRON BASED SUPERCONDUCTORS | |
dc.subject | IRRADIATION | |
dc.title | Enhancement of critical current density in CaKFe4As4 single crystals through 3 MeV proton irradiation | |
dc.type | info:eu-repo/semantics/article | |
dc.type | info:ar-repo/semantics/artículo | |
dc.type | info:eu-repo/semantics/publishedVersion | |