dc.creatorAguirre, Fernando Leonel
dc.creatorGomez, Nicolás M.
dc.creatorPazos, Sebastián Matías
dc.creatorPalumbo, Félix Roberto Mario
dc.creatorSuñé, Jordi
dc.creatorMiranda, Enrique
dc.date.accessioned2022-08-11T12:49:33Z
dc.date.accessioned2022-10-15T14:04:06Z
dc.date.available2022-08-11T12:49:33Z
dc.date.available2022-10-15T14:04:06Z
dc.date.created2022-08-11T12:49:33Z
dc.date.issued2021-03
dc.identifierAguirre, Fernando Leonel; Gomez, Nicolás M.; Pazos, Sebastián Matías; Palumbo, Félix Roberto Mario; Suñé, Jordi; et al.; Minimization of the line resistance impact on memdiode-based simulations of multilayer perceptron arrays applied to pattern recognition; MDPI AG; Journal of Low Power Electronics and Applications; 11; 1; 3-2021; 1-18
dc.identifier2079-9268
dc.identifierhttp://hdl.handle.net/11336/165149
dc.identifierCONICET Digital
dc.identifierCONICET
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/4394693
dc.description.abstractIn this paper, we extend the application of the Quasi-Static Memdiode model to the real-istic SPICE simulation of memristor-based single (SLPs) and multilayer perceptrons (MLPs) in-tended for large dataset pattern recognition. By considering ex-situ training and the classification of the hand-written characters of the MNIST database, we evaluate the degradation of the inference accuracy due to the interconnection resistances for MLPs involving up to three hidden neural layers. Two approaches to reduce the impact of the line resistance are considered and implemented in our simulations, they are the inclusion of an iterative calibration algorithm and the partitioning of the synaptic layers into smaller blocks. The obtained results indicate that MLPs are more sensitive to the line resistance effect than SLPs and that partitioning is the most effective way to minimize the impact of high line resistance values.
dc.languageeng
dc.publisherMDPI AG
dc.relationinfo:eu-repo/semantics/altIdentifier/url/https://www.mdpi.com/2079-9268/11/1/9
dc.relationinfo:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.3390/jlpea11010009
dc.rightshttps://creativecommons.org/licenses/by/2.5/ar/
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subjectCROSS-POINT
dc.subjectMEMORY
dc.subjectMEMRISTOR
dc.subjectMULTILAYER PERCEPTRON
dc.subjectNEUROMORPHIC
dc.subjectPATTERN RECOGNITION
dc.subjectRESISTIVE-SWITCHING
dc.subjectRRAM
dc.titleMinimization of the line resistance impact on memdiode-based simulations of multilayer perceptron arrays applied to pattern recognition
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:ar-repo/semantics/artículo
dc.typeinfo:eu-repo/semantics/publishedVersion


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