dc.creator | Palumbo, Félix Roberto Mario | |
dc.creator | Liang, Xianhu | |
dc.creator | Yuan, Bin | |
dc.creator | Shi, Yuanyuan | |
dc.creator | Hui, Fei | |
dc.creator | Villena, Marco A. | |
dc.creator | Lanza, Mario | |
dc.date.accessioned | 2021-06-18T16:16:17Z | |
dc.date.accessioned | 2022-10-15T11:04:11Z | |
dc.date.available | 2021-06-18T16:16:17Z | |
dc.date.available | 2022-10-15T11:04:11Z | |
dc.date.created | 2021-06-18T16:16:17Z | |
dc.date.issued | 2018-03 | |
dc.identifier | Palumbo, Félix Roberto Mario; Liang, Xianhu; Yuan, Bin; Shi, Yuanyuan; Hui, Fei; et al.; Bimodal Dielectric Breakdown in Electronic Devices Using Chemical Vapor Deposited Hexagonal Boron Nitride as Dielectric; Blackwell Publishing; Advanced Electronic Materials; 4; 3; 3-2018; 1-8 | |
dc.identifier | http://hdl.handle.net/11336/134568 | |
dc.identifier | 2199-160X | |
dc.identifier | CONICET Digital | |
dc.identifier | CONICET | |
dc.identifier.uri | https://repositorioslatinoamericanos.uchile.cl/handle/2250/4378736 | |
dc.description.abstract | Multilayer hexagonal boron nitride (h-BN) is an insulating 2D material that shows good interaction with graphene and MoS2, and it is considered a very promising dielectric for future 2D-materials-based electronic devices. Previous studies analyzed the dielectric properties of thick (>10 nm) mechanically exfoliated h-BN nanoflakes (diameter < 20 μm) via conductive atomic force microscopy and applying very high voltages (>10 V); however, these methods are not scalable. In this work, the first device-level reliability study of large area h-BN dielectric stacks (grown via chemical vapor deposition) is presented, and the complete dielectric breakdown (BD) process is described. The experiments and calculations indicate that the BD process in metal/h-BN/metal devices starts with a progressive current increase across the h-BN stack until current densities up to 0.1 A cm−2 are reached. After that, the currents increase by sudden steps, which can be large (>1 order of magnitude, related to the BD of one/few h-BN layers) or small (<1 order of magnitude, related to the lateral propagation of the BD). The bimodal BD process of h-BN here presented (which cannot be detected via conductive atomic force microscopy) is essential to understand the reliability of 2D-material-based electronic devices using h-BN as dielectric. | |
dc.language | eng | |
dc.publisher | Blackwell Publishing | |
dc.relation | info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1002/aelm.201700506 | |
dc.relation | info:eu-repo/semantics/altIdentifier/url/https://onlinelibrary.wiley.com/doi/abs/10.1002/aelm.201700506 | |
dc.rights | https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ | |
dc.rights | info:eu-repo/semantics/restrictedAccess | |
dc.subject | CHARGE TRAPPING | |
dc.subject | DIELECTRIC BREAKDOWN (BD) | |
dc.subject | HEXAGONAL BORON NITRIDE (H-BN) | |
dc.subject | RELIABILITY | |
dc.subject | STRESS-INDUCED LEAKAGE CURRENT (SILC) | |
dc.title | Bimodal Dielectric Breakdown in Electronic Devices Using Chemical Vapor Deposited Hexagonal Boron Nitride as Dielectric | |
dc.type | info:eu-repo/semantics/article | |
dc.type | info:ar-repo/semantics/artículo | |
dc.type | info:eu-repo/semantics/publishedVersion | |