Pressure dependence of the silicon carbide synthesis temperature

Abstract

The starting temperature for SiC synthesis from elemental silicon, carbon black, and graphite powders was determined for pressures ranging from 0.8 to 11 GPa by in situ X-ray diffraction experiments. The synthesized SiC corresponds to the cubic 3C phase with the presence of stacking faults along the [111] direction. The lowest density of the stacking faults is achieved when black carbon is used instead of graphite. The minimum temperature to start the Si + C → SiC reaction slightly decreases when the pressure is increased up to 6 GPa and the reaction begins before silicon melts. For pressures higher than 8 GPa, the starting temperature increases, and the formation of SiC from the SiII phase requires the complete melting of silicon. Bulk modulus Bo= 236(14) GPa was obtained for the synthesized SiC phase.