dc.creatorEMMANUEL TORRES RIOS
dc.creatorREYDEZEL TORRES TORRES
dc.creatorEDMUNDO ANTONIO GUTIERREZ DOMINGUEZ
dc.date2009
dc.date.accessioned2022-10-12T19:59:14Z
dc.date.available2022-10-12T19:59:14Z
dc.identifierhttp://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1285
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/4126338
dc.descriptionA procedure to analyze the effect of the MOSFET drain-bulk junction tunneling current at high frequencies is presented. This procedure allows identifying the presence of band-to-band tunneling in short channel-length MOSFETs at different drain-to-source voltages. Since this analysis is based on experimental S-parameters performed to a single MOSFET, the procedure is not affected by the variations occurring in devices with different geometries. Excellent correlation between simulated and experimental output impedance for a 0.1μm channel-length bulk MOSFET up to 40GHz demonstrates the validity of the proposed technique.
dc.formatapplication/pdf
dc.languageeng
dc.publisherElsevier Ltd.
dc.relationcitation:Torres-Rios, E., et al., (2009). Analysis of the impact of the drain-junction tunneling effect on a microwave MOSFET from S-parameter measurements, Solid-State Electronics (53): 145–149
dc.rightsinfo:eu-repo/semantics/openAccess
dc.rightshttp://creativecommons.org/licenses/by-nc-nd/4.0
dc.subjectinfo:eu-repo/classification/MOSFETs/MOSFETs
dc.subjectinfo:eu-repo/classification/Scattering parameters measurement/Scattering parameters measurement
dc.subjectinfo:eu-repo/classification/Semiconductor device modeling/Semiconductor device modeling
dc.subjectinfo:eu-repo/classification/cti/1
dc.subjectinfo:eu-repo/classification/cti/22
dc.subjectinfo:eu-repo/classification/cti/2203
dc.titleAnalysis of the impact of the drain-junction tunneling effect on a microwave MOSFET from S-parameter measurements
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/acceptedVersion
dc.audiencestudents
dc.audienceresearchers
dc.audiencegeneralPublic


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