dc.creatorPETER PERETZ HALEVI
dc.creatorELIZABETH GALINDO LINARES
dc.date2007
dc.date.accessioned2022-10-12T19:38:23Z
dc.date.available2022-10-12T19:38:23Z
dc.identifierhttp://inaoe.repositorioinstitucional.mx/jspui/handle/1009/897
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/4119091
dc.descriptionIf the modal density available to an excited atom is varied on the time scale of its lifetime, then we can expect the natural process of spontaneous emission (SE) to become dynamically manipulable. We consider various experimental possibilities and focus on an atom embedded in a photonic crystal designed to have a band edge in the vicinity of the frequency of the emitted light. Specifically, we calculate the rate of SE by erbium ions (radiating at the wavelength 1.54 lm) implanted in a one-dimensional silicon/silica photonic crystal. The semiconductor layers are assumed to be strongly doped; by tuning the impurity density the free carrier concentration changes and the photonic bands shift. As a result, the SE rate exhibits significant dependency on the level of charge injection.
dc.formatapplication/pdf
dc.languageeng
dc.publisherElsevier
dc.publisherScience Direct
dc.relationcitation:P. Halevi
dc.relationcitation:E. Galindo-Linares
dc.rightsinfo:eu-repo/semantics/openAccess
dc.rightshttp://creativecommons.org/licenses/by-nc-nd/4.0
dc.subjectinfo:eu-repo/classification/cti/1
dc.subjectinfo:eu-repo/classification/cti/22
dc.subjectinfo:eu-repo/classification/cti/2203
dc.titleTuning and switching of the spontaneous emission in one-dimensional photonic crystals
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/acceptedVersion
dc.audiencestudents
dc.audienceresearchers
dc.audiencegeneralPublic


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