Novel semiconducting materials for optoelectronic applications: Al1−xTlxN alloys

dc.creatorDantas, Nilton Souza
dc.creatorAlmeida, J. Souza de
dc.creatorAhuja, Rajeev
dc.creatorPersson, C.
dc.creatorSilva, A. Ferreira da
dc.date.accessioned2013-12-10T20:22:34Z
dc.date.accessioned2022-10-07T18:53:18Z
dc.date.available2013-12-10T20:22:34Z
dc.date.available2022-10-07T18:53:18Z
dc.date.created2013-12-10T20:22:34Z
dc.date.issued2008
dc.identifier0003-6951
dc.identifierhttp://repositorio.ufba.br/ri/handle/ri/14077
dc.identifierv. 92, n. 12
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/4012500
dc.description.abstractWe proprose the ternary semiconducting Al1−xTlxNalloys as new material for optoelectronic applications. Ab initio calculations have been performed to study structural, electronic, and optical properties of the theoretically designed thallium-aluminum based nitride alloys. We found that the lattice constants vary linearly with thallium composition whereas the band gap and absorption edge span from ultraviolet to infrared energy region by increasing thallium content which make the predicted material interesting for infrared optical devices among other technological applications.
dc.languageen
dc.publisherBrasil
dc.rightsAcesso Aberto
dc.sourcehttp://dx.doi.org/10.1063/1.2901146
dc.subjectSemicondutores
dc.subjectCircuitos eletrônicos
dc.titleNovel semiconducting materials for optoelectronic applications: Al1−xTlxN alloys
dc.typeArtigo de Periódico


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