Artigo de Periódico
Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions
Fecha
2013Registro en:
2045-2322
v. 3, n. 1634
Autor
Fontana, Marcio
Deppe, Tristan
Boyd, Anthony K.
Rinzan, Mohamed
Liu, Amy Y.
Paranjape, Makarand
Barbara, Paola
Institución
Resumen
Semiconducting molybdenum disulfphide has emerged as an attractive material for novel nanoscale
optoelectronic devices due to its reduced dimensionality and large direct bandgap. Since optoelectronic
devices require electron-hole generation/recombination, it is important to be able to fabricate ambipolar
transistors to investigate charge transport both in the conduction band and in the valence band. Although
n-type transistor operation for single-layer and few-layer MoS2 with gold source and drain contacts was
recently demonstrated, transport in the valence band has been elusive for solid-state devices. Here we show
that a multi-layer MoS2 channel can be hole-doped by palladium contacts, yielding MoS2 p-type transistors.
When two different materials are used for the source and drain contacts, for example hole-doping Pd and
electron-doping Au, the Schottky junctions formed at the MoS2 contacts produce a clear photovoltaic effect.