Optical absorption and band gap shift of n-doped AlxGa1−xAs alloys grown by MBE

dc.creatorSilva, A. Ferreira da
dc.creatorPersson, C.
dc.creatorBerggren, K. F.
dc.creatorPepe, Iuri Muniz
dc.creatorAlves, A. Santos
dc.creatorOliveira, A. G. de
dc.creatorSilva, A. Ferreira da
dc.creatorPersson, C.
dc.creatorBerggren, K. F.
dc.creatorPepe, Iuri Muniz
dc.creatorAlves, A. Santos
dc.creatorOliveira, A. G. de
dc.date.accessioned2013-08-22T17:31:28Z
dc.date.accessioned2022-10-07T18:09:05Z
dc.date.available2013-08-22T17:31:28Z
dc.date.available2022-10-07T18:09:05Z
dc.date.created2013-08-22T17:31:28Z
dc.date.issued1998
dc.identifier0167-9317
dc.identifierhttp://www.repositorio.ufba.br/ri/handle/ri/12687
dc.identifierv. 43–44
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/4011261
dc.description.abstractWe have investigated the band gap shift of Si-doped AlxGa1−xAs alloys as a function of both silicon concentration and Al composition. Correlation and impurity scattering effects were included in the theoretical model. The optical absorption of Al0.3Ga0.7As:Si at the fundamental band gap energy has been measured by a photoacoustic spectroscopy technique. We found the energy gap at about 1.8 eV. The samples were grown by molecular beam epitaxy and the Al fraction was measured by reflection high energy electro-diffraction technique.
dc.languageen
dc.publisherMicroelectronic Engineering
dc.sourcehttp://dx.doi.org.ez10.periodicos.capes.gov.br/10.1016/S0167-9317(98)00201-9
dc.subjectDoped AlGaAs alloys
dc.subjectBand gap energy
dc.subjectPhotoacoustic spectroscopy
dc.subjectMolecular beam epitaxy
dc.titleOptical absorption and band gap shift of n-doped AlxGa1−xAs alloys grown by MBE
dc.typeArtigo de Periódico


Este ítem pertenece a la siguiente institución