Impurity states in the narrow band-gap semiconductor n-type InSb

dc.creatorSilva, A. Ferreira da
dc.creatorDantas, Nilton Souza
dc.creatorMota, F. de Brito
dc.creatorCanuto, Sylvio
dc.creatorFazzio, A.
dc.creatorSilva, A. Ferreira da
dc.creatorDantas, Nilton Souza
dc.creatorMota, F. de Brito
dc.creatorCanuto, Sylvio
dc.creatorFazzio, A.
dc.date.accessioned2022-10-07T16:19:43Z
dc.date.available2022-10-07T16:19:43Z
dc.date.issued1996
dc.identifier0038-1098
dc.identifierhttp://www.repositorio.ufba.br/ri/handle/ri/8496
dc.identifierv. 99, n. 4
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/4007167
dc.description.abstractWe investigate impurity pair and triad formations in the narrow band-gap semiconductor n-doped InSb. It is found that in the region of the band-gap energy, Eg = 0.23 eV, at 0 K, the effects of such clusters play a relevant role in the optical properties around and below the ionization energy of an isolated impurity (i.e., Ei = 0.64 meV). The transition for the uncompensated system is obtained as the concentration of impurities exceeds Nc = 4.7 × 1013 cm−3.
dc.languageen
dc.sourcehttp://dx.doi.org.ez10.periodicos.capes.gov.br/10.1016/0038-1098(96)80022-6
dc.subjectA. disordered systems
dc.subjectA. semiconductors
dc.subjectC. impurities in semiconductors
dc.subjectD. optical properties
dc.titleImpurity states in the narrow band-gap semiconductor n-type InSb
dc.typeArtigo de Periódico


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