Band gap energy determination by photoacoustic spectroscopy under continuous light excitation

dc.creatorAstrath, N. G. C.
dc.creatorPersson, C.
dc.creatorSilva, A. Ferreira da
dc.creatorSato, F.
dc.creatorPedrochi, F.
dc.creatorMedina, A. N.
dc.creatorBento, Antonio Carlos
dc.creatorAstrath, N. G. C.
dc.creatorPersson, C.
dc.creatorSilva, A. Ferreira da
dc.creatorSato, F.
dc.creatorPedrochi, F.
dc.creatorMedina, A. N.
dc.creatorBento, Antonio Carlos
dc.date.accessioned2012-07-04T13:14:58Z
dc.date.accessioned2022-10-07T15:31:38Z
dc.date.available2012-07-04T13:14:58Z
dc.date.available2022-10-07T15:31:38Z
dc.date.created2012-07-04T13:14:58Z
dc.date.issued2006
dc.identifier0003-6951
dc.identifierhttp://www.repositorio.ufba.br/ri/handle/ri/6305
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/4005251
dc.description.abstractIn this work the authors used the photoacoustic spectroscopy under continuous light excitation to determine the optical band gap of semiconductors. The experiments were performed in lead iodide PbI2 and hexagonal silicon carbide 4H-SiC samples. The nonradiative relaxation processes are discussed in terms of the generated signal. A mechanism to describe the signal increase/decrease under the continuous excitation is presented. The results showed that the method was useful to locate the band gap directly from the optical absorption spectra
dc.languageen
dc.publisherAPPLIED PHYSICS LETTERS
dc.sourcehttp://dx.doi.org/10.1063/1.2402239
dc.titleBand gap energy determination by photoacoustic spectroscopy under continuous light excitation
dc.typeArtigo de Periódico


Este ítem pertenece a la siguiente institución