dc.creatorCárdenas, J. R.
dc.creatorVasconcelos, Elder A. de
dc.creatorAzevedo, W. M. de
dc.creatorSilva, E. F. da
dc.creatorPepe, Iuri Muniz
dc.creatorSilva, A. Ferreira da
dc.creatorRibeiro, S. Santedicola
dc.creatorSilva, K. Abreu
dc.creatorCárdenas, J. R.
dc.creatorVasconcelos, Elder A. de
dc.creatorAzevedo, W. M. de
dc.creatorSilva, E. F. da
dc.creatorPepe, Iuri Muniz
dc.creatorSilva, A. Ferreira da
dc.creatorRibeiro, S. Santedicola
dc.creatorSilva, K. Abreu
dc.date.accessioned2022-10-07T15:24:33Z
dc.date.available2022-10-07T15:24:33Z
dc.date.issued2008
dc.identifier0169-4332
dc.identifierhttp://www.repositorio.ufba.br/ri/handle/ri/5994
dc.identifierv. 255, n. 3
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/4004964
dc.description.abstractWe discuss on the development and characterization of a p–n heterojunction of polyaniline–silicon as a photo detector for the ultraviolet (UV) region. The hybrid heterojunction consists ofmicro and nano-films (<300 nm thick) of polyaniline deposited on the top of a silicon wafer through the spin-coating technique, where in the backside of silicon and on top of polyaniline, aluminum and gold were respectively deposited by evaporation to make the electric contacts. The electrical characteristics of the devices present excellent reproducibility and high rectification ratio. In addition, the spectroscopic and the photon response analysis of the devices strongly indicates that it can be used as a broad band photon detector, with good sensitivity especially in the UV region 2.0–3.5 eV, where it presents enhanced sensitivity ( 200%) when compared to commercial all-silicon diodes such as the OPT 301 UV detector.
dc.languageen
dc.sourcehttp://dx.doi.org/10.1016/j.apsusc.2008.07.038
dc.subjectSilicon
dc.subjectPolyaniline
dc.subjectUV photodetector
dc.subjectHeterojunction
dc.titleA conducting polymer–silicon heterojunction as a new ultraviolet photodetector
dc.typeArtigo de Periódico


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