Photoacoustic and transmission studies of SiC polytypes

dc.creatorOliveira, A. C. de
dc.creatorFreitas Junior, J. A.
dc.creatorMoore, W. J.
dc.creatorSilva, A. Ferreira da
dc.creatorPepe, Iuri Muniz
dc.creatorAlmeida, J. Souza de
dc.creatorBraga, G. C. B.
dc.creatorOsório-Guillen, J. M.
dc.creatorPersson, C.
dc.creatorAhuja, Rajeev
dc.creatorOliveira, A. C. de
dc.creatorFreitas Junior, J. A.
dc.creatorMoore, W. J.
dc.creatorSilva, A. Ferreira da
dc.creatorPepe, Iuri Muniz
dc.creatorAlmeida, J. Souza de
dc.creatorBraga, G. C. B.
dc.creatorOsório-Guillen, J. M.
dc.creatorPersson, C.
dc.creatorAhuja, Rajeev
dc.date.accessioned2011-12-20T10:30:59Z
dc.date.accessioned2022-10-07T15:02:46Z
dc.date.available2011-12-20T10:30:59Z
dc.date.available2022-10-07T15:02:46Z
dc.date.created2011-12-20T10:30:59Z
dc.date.issued2003
dc.identifier1516-1439
dc.identifierhttp://www.repositorio.ufba.br/ri/handle/ri/4916
dc.identifierv. 6, n. 1.
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/4003962
dc.description.abstractThe optical bandgap energies (OBGE) of 3C, 15R, 6H and 4H-SiC have been investigate experimentally by transmission and photoacoustic spectroscopies. The measurements were performed on 470 mm thick wafers. The OBGE obtained from both spectroscopies for different polytypes show very good agreement. In order to have a better understanding of these materials calculations of eletronic band structure were performed by the full-potential linearized augmented plane wave (FPLAPW) method. For the OBGE the results are compared to the measurements agreeing closely over the energies of those polytypes.
dc.languageen
dc.sourcehttp://www.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392003000100009&lng=en&nrm=iso
dc.subjectSiC Polytypes
dc.subjectOptical bandgap energies
dc.subjectPlane wave method
dc.titlePhotoacoustic and transmission studies of SiC polytypes
dc.typeArtigo de Periódico


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