Submicron fabrication by local anodic oxidation of germanium thin films

dc.creatorOliveira, Alexandre Barbosa de
dc.creatorRibeiro, Gilberto Medeiros
dc.creatorCosta, Antonio Azevedo da
dc.date2020-04-29T21:39:45Z
dc.date2020-04-29T21:39:45Z
dc.date2009-08-04
dc.identifierOLIVEIRA, Alexandre Barbosa de; Medeiros-Ribeiro, G ; Azevedo, A. Submicron fabrication by local anodic oxidation of germanium thin films. Nanotechnology (Bristol), v. 20, p. 345301, 2009. ISSN 1742-6596 versão online. DOI https://doi.org/10.1088/0957-4484/20/34/345301. Disponível em: https://iopscience.iop.org/article/10.1088/0957-4484/20/34/345301. Acesso em: 29 abr. 2020.
dc.identifier1742-6588 (print), 1742-6596 (online)
dc.identifierhttps://repositorio.ufrn.br/jspui/handle/123456789/28845
dc.identifier10.1088/0957-4484/20/34/345301
dc.descriptionHere we describe a lithography scheme based on the local anodic oxidation of germanium film by a scanning atomic force microscope in a humidity-controlled atmosphere. The oxidation kinetics of the Ge film were investigated by a tapping mode, in which a pulsed bias voltage was synchronized and applied with the resonance frequency of the cantilever, and by a contact mode, in which a continuous voltage was applied. In the tapping mode we clearly identified two regimes of oxidation as a function of the applied voltage: the trench width increased linearly during the vertical growth and increased exponentially during the lateral growth. Both regimes of growth were interpreted taking into consideration the Cabrera–Mott mechanism of oxidation applied to the oxide/Ge interface. We also show the feasibility of the bottom-up fabrication process presented in this work by showing a Cu nanowire fabricated on top of a silicon substrate.
dc.languageen
dc.publisherIOP PUBLISHING
dc.subjectSubmicron fabrication
dc.subjectAnodic oxidation
dc.subjectGermanium thin films
dc.titleSubmicron fabrication by local anodic oxidation of germanium thin films
dc.typearticle


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