dc.contributorDelmonte, Maurício Roberto Bomio
dc.contributor
dc.contributorhttp://lattes.cnpq.br/3173204192281049
dc.contributor
dc.contributorhttp://lattes.cnpq.br/9558299312183852
dc.contributorPaskocimas, Carlos Alberto
dc.contributor
dc.contributorhttp://lattes.cnpq.br/2365059843175411
dc.contributorAraújo, José Humberto de
dc.contributor
dc.contributorhttp://lattes.cnpq.br/2455132422249405
dc.contributorSousa, Maria Rosimar de
dc.contributor
dc.contributorhttp://lattes.cnpq.br/7568207788731852
dc.creatorMendes, Armando Monte
dc.date.accessioned2016-06-07T00:00:37Z
dc.date.accessioned2022-10-06T13:54:38Z
dc.date.available2016-06-07T00:00:37Z
dc.date.available2022-10-06T13:54:38Z
dc.date.created2016-06-07T00:00:37Z
dc.date.issued2015-01-28
dc.identifierMENDES, Armando Monte. Estudo da deposição de filmes finos de BaTi(1-X)Zr(X)O3 por meio de planejamento Box-Behnken. 2015. 65f. Dissertação (Mestrado em Ciência e Engenharia de Materiais) - Centro de Ciências Exatas e da Terra, Universidade Federal do Rio Grande do Norte, Natal, 2015.
dc.identifierhttps://repositorio.ufrn.br/jspui/handle/123456789/20591
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/3973625
dc.description.abstractFerroelectric ceramics with perovskite structure (ABO3) are widely used in solid state memories (FeRAM’s and DRAM's) as well as multilayered capacitors, especially as a thin films. When doped with zirconium ions, BaTiO3-based materials form a solid solution known as barium zirconate titanate (BaTi1-xZrxO3). Also called BZT, this material can undergo significant changes in their electrical properties for a small variation of zirconium content in the crystal lattice. The present work is the study of the effects of deposition parameters of BaTi0,75Zr0,25O3 thin films by spin-coating method on their morphology and physical properties, through an experimental design of the Box-Behnken type. The resin used in the process has been synthesized by the polymeric precursor method (Pechini) and subsequently split into three portions each of which has its viscosity adjusted to 10, 20 and 30 mPa∙s by means of a rotary viscometer. The resins were then deposited on Pt/Ti/SiO2/Si substrates by spin-coating method on 15 different combinations of viscosity, spin speed (3000, 5500 and 8000 rpm) and the number of deposited layers (5, 8 and 11 layers) and then calcined at 800 ° C for 1 h. The phase composition of the films was analyzed by X-ray diffraction (XRD) and indexed with the JCPDS 36-0019. Surface morphology and grain size were observed by atomic force microscopy (AFM) indicating uniform films and average grain size around 40 nm. Images of the cross section of the films were obtained by scanning electron microscopy field emission (SEM-FEG), indicating very uniform thicknesses ranging from 140-700 nm between samples. Capacitance measurements were performed at room temperature using an impedance analyzer. The films presented dielectric constant values of 55-305 at 100kHz and low dielectric loss. The design indicated no significant interaction effects between the deposition parameters on the thickness of the films. The response surface methodology enabled better observes the simultaneous effect of variables.
dc.publisherUniversidade Federal do Rio Grande do Norte
dc.publisherBrasil
dc.publisherUFRN
dc.publisherPROGRAMA DE PÓS-GRADUAÇÃO EM CIÊNCIA E ENGENHARIA DE MATERIAIS
dc.rightsAcesso Aberto
dc.subjectBZT
dc.subjectFilmes Finos
dc.subjectPropriedades Elétricas
dc.subjectPlanejamento Box-Behnken
dc.titleEstudo da deposição de filmes finos de BaTi(1-X)Zr(X)O3 por meio de planejamento Box-Behnken
dc.typemasterThesis


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