dc.contributorUniversidade Estadual Paulista (Unesp)
dc.contributorMassachusetts Institute of Technology (MIT)
dc.date.accessioned2014-05-27T11:29:55Z
dc.date.accessioned2022-10-05T18:54:29Z
dc.date.available2014-05-27T11:29:55Z
dc.date.available2022-10-05T18:54:29Z
dc.date.created2014-05-27T11:29:55Z
dc.date.issued2013-07-03
dc.identifierSensors and Actuators, B: Chemical, v. 186, p. 103-108.
dc.identifier0925-4005
dc.identifierhttp://hdl.handle.net/11449/75908
dc.identifier10.1016/j.snb.2013.05.087
dc.identifierWOS:000324223600015
dc.identifier2-s2.0-84879488630
dc.identifier2305581567093057
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/3924824
dc.description.abstractSingle crystalline SnO micro-disks, synthesized by a carbothermal reduction process, exhibited a nearly 1000-fold increase in resistance upon exposure to 100 ppm of NO2 without addition of catalysts or dopants nor the existence of nano-sized dimensions. Moreover, the SnO displayed a greater than 100-fold selectivity to NO2 over potential interferents including CO, H2 and CH4. The high sensor signal and exceptional selectivity for this novel sensor material are attributed to the existence of a high density of active lone pair electrons on the exposed (0 0 1) planes of the single crystalline SnO disks. This, thereby, identifies new means, not utilizing nano-dimensions, to achieve high gas sensitivity. © 2013 Elsevier B.V. All rights reserved.
dc.languageeng
dc.relationSensors and Actuators B: Chemical
dc.relation5.667
dc.relation1,406
dc.rightsAcesso restrito
dc.sourceScopus
dc.subjectGas sensor
dc.subjectGiant chemo-resistance
dc.subjectSnO
dc.subjectChemoresistance
dc.subjectGas sensitivity
dc.subjectLone pair electrons
dc.subjectNano-dimensions
dc.subjectNano-sized dimensions
dc.subjectSensor materials
dc.subjectSingle-crystalline
dc.subjectChemical sensors
dc.subjectCrystalline materials
dc.subjectNitrogen oxides
dc.subjectNanosensors
dc.titleGiant Chemo-Resistance of SnO disk-like structures
dc.typeArtigo


Este ítem pertenece a la siguiente institución