dc.contributorUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-27T11:25:26Z
dc.date.accessioned2022-10-05T18:25:31Z
dc.date.available2014-05-27T11:25:26Z
dc.date.available2022-10-05T18:25:31Z
dc.date.created2014-05-27T11:25:26Z
dc.date.issued2011-01-01
dc.identifierSolid State Communications, v. 151, n. 2, p. 173-176, 2011.
dc.identifier0038-1098
dc.identifierhttp://hdl.handle.net/11449/72251
dc.identifier10.1016/j.ssc.2010.10.034
dc.identifier2-s2.0-78650512586
dc.identifier2-s2.0-78650512586.pdf
dc.identifier0477045906733254
dc.identifier0000-0003-2827-0208
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/3921336
dc.description.abstractIn the present communication, by using dielectric spectroscopy measurement, the correlations between Nanosized Barrier Layer Capacitance (NBLC) (Bueno et al. (2009) [7]) and the high frequency polaronic near-Debye dipolar relaxation found in CaCu3Ti4O12 compounds was discussed. The polaronic process was confirmed to be closely associated with the ultrahigh dielectric features of CaCu3Ti4O12 materials and its concomitant dielectric loss. Herein, the shift in relaxation frequency as a function of temperature was used for calculating the activation energy for hopping electronic conduction. The value obtained was 33 meV, an energy whose magnitude is compatible and confirmed the hypothesis of polaronic features for this high frequency dipolar relaxation process. Furthermore, it is shown that the nanosized barrier inferred from the NBLC model has a polaronic feature with dielectric permittivity exiting orthogonally to dielectric loss, a phenomenological pattern that contradicts the normally observed behavior for traditional dielectrics but explain the dielectric and conductivity feature of CaCu3Ti4O12 compounds. © 2010 Elsevier Ltd. All rights reserved.
dc.languageeng
dc.relationSolid State Communications
dc.relation1.549
dc.relation0,535
dc.rightsAcesso aberto
dc.sourceScopus
dc.subjectA. CCTO
dc.subjectC. Stacking faults
dc.subjectD. Dielectric relaxation
dc.subjectD. NBLC model
dc.subjectBarrier layers
dc.subjectDielectric permittivities
dc.subjectDipolar relaxation
dc.subjectElectronic conduction
dc.subjectHigh frequency
dc.subjectNano-sized
dc.subjectNanoscale effects
dc.subjectPolaronic features
dc.subjectRelaxation frequency
dc.subjectSpectroscopy measurements
dc.subjectActivation energy
dc.subjectDielectric devices
dc.subjectDielectric losses
dc.subjectDielectric relaxation
dc.subjectElectron energy loss spectroscopy
dc.subjectStacking faults
dc.subjectDielectric materials
dc.titleNanoscale effects and polaronic relaxation in CaCu3Ti 4O12 compounds
dc.typeArtigo


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