Resenha
Rietveld analyses and piezoelectric properties of niobium doped bismuth titanate systems
Fecha
2010-08-01Registro en:
Journal of Advanced Microscopy Research, v. 5, n. 2, p. 149-157, 2010.
2156-7573
2156-7581
10.1166/jamr.2010.1037
2-s2.0-84864699026
Autor
Universidade Estadual Paulista (Unesp)
Universidade Federal de Itajubá (UNIFEI)
Resumen
Bi 4Ti 3- xNbxO 12 (BITNb) samples, with × ranging from 0 to 0.40 were obtained using a polymeric precursor solution. Rietveld analyses confirmed that the powders crystallize in an orthorhombic structure free of secondary phases with space group Fmmm. Raman analysis evidenced a sharp increase in the bands intensity located at 129 cm -1 and 190 cm -1 due the lattice distortion in BIT02Nb and BIT04Nb compositions. UV-vis spectra indicated that addition of niobium causes a reduction of defects in the BIT lattice due the suppression of oxygen vacancies located at BO-6 octahedral. Size and morphology of particles as well as electrical behavior of BIT ceramics were affected by addition of donor dopant. Polarization reversal was investigated by applying dc voltage through a conductive tip during the area scanning and was investigated by piezoresponse force microscopy (PFM). PFM measurements revealed a decrease in piezoelectric response with increasing Nb concentration originating from a reduced polarizability along the a-axis. High spontaneous polarization is noted for the less doped sample due the reduction of strain energy and pin charged defects after niobium addition. Copyright © 2010 American Scientific Publishers.