Excitons in undoped AlGaAs/GaAs wide parabolic quantum wells

dc.contributorUniversidade Estadual Paulista (Unesp)
dc.contributorUniversidade de São Paulo (USP)
dc.date.accessioned2014-05-27T11:24:40Z
dc.date.accessioned2022-10-05T18:21:00Z
dc.date.available2014-05-27T11:24:40Z
dc.date.available2022-10-05T18:21:00Z
dc.date.created2014-05-27T11:24:40Z
dc.date.issued2010-04-12
dc.identifierJournal of Physics: Conference Series, v. 210.
dc.identifier1742-6588
dc.identifier1742-6596
dc.identifierhttp://hdl.handle.net/11449/71652
dc.identifier10.1088/1742-6596/210/1/012052
dc.identifierWOS:000289715800264
dc.identifier2-s2.0-77950480399
dc.identifierWOS000289715800264.pdf
dc.identifier9354064620643611
dc.identifier6977466698742311
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/3920805
dc.description.abstractIn this work the electronic structure of undoped AlGaAs/GaAs wide parabolic quantum wells (PQWs) with different well widths (1000 and 3000 ) were investigated by means of photoluminescence (PL) measurements. Due to the particular potential shape, the sample structure confines photocreated carriers with almost three-dimensional characteristics. Our data show that depending on the well width thickness it is possible to observe very narrow structures in the PL spectra, which were ascribed to emissions associated to the recombination of confined 1s-excitons of the parabolic potential wells. From our measurements, the exciton binding energies (of a few meV) were estimated. Besides the exciton emission, we have also observed PL emissions associated to electrons in the excited subbands of the PQWs. © 2010 IOP Publishing Ltd.
dc.languageeng
dc.relationJournal of Physics: Conference Series
dc.relation0,241
dc.relation0,241
dc.rightsAcesso aberto
dc.sourceScopus
dc.subjectAlGaAs/GaAs
dc.subjectExciton emission
dc.subjectExciton-binding energy
dc.subjectParabolic potential
dc.subjectParabolic quantum wells
dc.subjectPhotoluminescence measurements
dc.subjectPL emission
dc.subjectPL spectra
dc.subjectSample structure
dc.subjectSub-bands
dc.subjectThree-dimensional characteristics
dc.subjectWell width
dc.subjectBinding energy
dc.subjectElectronic structure
dc.subjectExcitons
dc.subjectThree dimensional
dc.subjectSemiconductor quantum wells
dc.titleExcitons in undoped AlGaAs/GaAs wide parabolic quantum wells
dc.typeTrabalho apresentado em evento


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