dc.contributor | Universidade Estadual Paulista (Unesp) | |
dc.date.accessioned | 2014-05-27T11:23:33Z | |
dc.date.accessioned | 2022-10-05T18:12:10Z | |
dc.date.available | 2014-05-27T11:23:33Z | |
dc.date.available | 2022-10-05T18:12:10Z | |
dc.date.created | 2014-05-27T11:23:33Z | |
dc.date.issued | 2008-05-21 | |
dc.identifier | AIP Conference Proceedings, v. 992, p. 1283-1288. | |
dc.identifier | 0094-243X | |
dc.identifier | 1551-7616 | |
dc.identifier | http://hdl.handle.net/11449/70411 | |
dc.identifier | 10.1063/1.2926834 | |
dc.identifier | WOS:000255857900226 | |
dc.identifier | 2-s2.0-43649091184 | |
dc.identifier | 2-s2.0-43649091184.pdf | |
dc.identifier | 7730719476451232 | |
dc.identifier | 1802982806436894 | |
dc.identifier | 0000-0001-5762-6424 | |
dc.identifier.uri | http://repositorioslatinoamericanos.uchile.cl/handle/2250/3919713 | |
dc.description.abstract | Optical excitation of Ce3+-doped SnO2 thin films, obtained by the sol-gel-dip-coating technique, is carried out and the effects on electrical transport are evaluated. Samples are doped with O. lat% of Ce, just above the saturation limit. The excitation is done with an intensity-controlled halogen-tungsten lamp through an interference filter, yielding an excitation wavelength of 513nm, 9 nm wide (width at half intensity peak). Irradiation at low temperature (25K) yields a conductivity increase much lower than above bandgap light. Such a behavior assures the ionization of intra-bandgap defect levels, since the filter does not allow excitation of electron-hole pairs, what would happen only in the UV range (below about 350nm). The decay of intra-bandgap excited levels in the range 250-320 K is recorded, leading to a temperature dependent behavior related to a thermally excited capture cross section for the dominating defect level. © 2008 American Institute of Physics. | |
dc.language | eng | |
dc.relation | AIP Conference Proceedings | |
dc.rights | Acesso aberto | |
dc.source | Scopus | |
dc.subject | Cerium | |
dc.subject | Electroluminescent devices | |
dc.subject | Thin films | |
dc.subject | Tin dioxide | |
dc.title | Optical excitation of charge carriers from intra-bandgap states in Ce-doped SnO2 thin films | |
dc.type | Trabalho apresentado em evento | |