Urbach energy parameter of flash evaporated amorphous gallium arsenide films

dc.contributorUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-27T11:20:27Z
dc.date.accessioned2022-10-05T17:46:14Z
dc.date.available2014-05-27T11:20:27Z
dc.date.available2022-10-05T17:46:14Z
dc.date.created2014-05-27T11:20:27Z
dc.date.issued2002-04-01
dc.identifierJournal of Non-Crystalline Solids, v. 299-302, n. PART 1, p. 328-332, 2002.
dc.identifier0022-3093
dc.identifierhttp://hdl.handle.net/11449/66858
dc.identifier10.1016/S0022-3093(01)01189-9
dc.identifierWOS:000175757400066
dc.identifier2-s2.0-0036539891
dc.identifier1134426200935790
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/3916574
dc.description.abstractThe dependence of the optical absorption edge on the deposition crucible temperature is used to investigate the electronic states in As-rich a-GaAs flash evaporated films. The Urbach energy parameter, determined from photothermal deflection spectroscopy (PDS), presents large correlated variations with crucible temperature. The optical and electrical results are consistent with the As under coordinated sites being the more important defect in the material. © 2002 Elsevier Science B.V. All rights reserved.
dc.languageeng
dc.relationJournal of Non-Crystalline Solids
dc.relation2.488
dc.relation0,722
dc.rightsAcesso aberto
dc.sourceScopus
dc.subjectCrystal defects
dc.subjectElectron energy levels
dc.subjectLight absorption
dc.subjectSemiconducting gallium arsenide
dc.subjectSpectroscopy
dc.subjectFlash evaporated films
dc.subjectAmorphous films
dc.titleUrbach energy parameter of flash evaporated amorphous gallium arsenide films
dc.typeTrabalho apresentado em evento


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