dc.contributorUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-27T11:18:17Z
dc.date.accessioned2022-10-05T17:35:07Z
dc.date.available2014-05-27T11:18:17Z
dc.date.available2022-10-05T17:35:07Z
dc.date.created2014-05-27T11:18:17Z
dc.date.issued1997-12-01
dc.identifierJournal of Materials Science: Materials in Electronics, v. 8, n. 4, p. 265-270, 1997.
dc.identifier0957-4522
dc.identifierhttp://hdl.handle.net/11449/65256
dc.identifier10.1023/A:1018574903725
dc.identifierWOS:A1997XP07600008
dc.identifier2-s2.0-0031206909
dc.identifier5584298681870865
dc.identifier9971202585286967
dc.identifier0000-0002-8356-8093
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/3915203
dc.description.abstractStarting from aqueous colloidal suspensions, undoped and Nb5+ doped SnO2 thin films have been prepared by using the dip-coating sol gel process. X-ray diffraction results show that films are polycrystalline with crystallites of average size1-4nm. Decreasing the thickness of the films and increasing the Nb5+ concentration limits the crystallite size growth during firing. Complex impedance measurements reveal capacitive and resistive effects between adjacent crystallites or grains, characteristic of electrical potential barriers. The transfer of charge throughout these barriers determines the macroscopic electrical resistance of the layer. The analysis of the optical absorption spectra shows that the samples present more than 80% of their transmittance in the visible region and the value of the band gap energy increases with decreasing crystallite size. © 1997 Chapman & Hall.
dc.languageeng
dc.relationJournal of Materials Science: Materials in Electronics
dc.relation2.324
dc.relation0,503
dc.rightsAcesso restrito
dc.sourceScopus
dc.subjectCoating techniques
dc.subjectCrystal growth
dc.subjectCrystal structure
dc.subjectElectric impedance measurement
dc.subjectElectric properties
dc.subjectElectric resistance
dc.subjectEnergy gap
dc.subjectFilm preparation
dc.subjectOptical properties
dc.subjectSemiconducting films
dc.subjectSol-gels
dc.subjectX ray diffraction analysis
dc.subjectAqueous colloidal suspensions
dc.subjectBand gap energy
dc.subjectComplex impedance measurements
dc.subjectDip coating
dc.subjectTin dioxide
dc.subjectSemiconducting tin compounds
dc.titleElectrical and optical characteristics of SnO2 thin films prepared by dip coating from aqueous colloidal suspensions
dc.typeArtigo


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