dc.contributor | Universidade Estadual Paulista (Unesp) | |
dc.contributor | Universidade Federal de Itajubá (UNIFEI) | |
dc.date.accessioned | 2014-05-20T15:34:22Z | |
dc.date.accessioned | 2022-10-05T17:19:01Z | |
dc.date.available | 2014-05-20T15:34:22Z | |
dc.date.available | 2022-10-05T17:19:01Z | |
dc.date.created | 2014-05-20T15:34:22Z | |
dc.date.issued | 2011-03-03 | |
dc.identifier | Journal of Alloys and Compounds. Lausanne: Elsevier B.V. Sa, v. 509, n. 9, p. 3817-3821, 2011. | |
dc.identifier | 0925-8388 | |
dc.identifier | http://hdl.handle.net/11449/42526 | |
dc.identifier | 10.1016/j.jallcom.2010.12.184 | |
dc.identifier | WOS:000287968000021 | |
dc.identifier | WOS000287968000021.pdf | |
dc.identifier | 3573363486614904 | |
dc.identifier.uri | http://repositorioslatinoamericanos.uchile.cl/handle/2250/3913384 | |
dc.description.abstract | Calcium copper titanate, CaCu3Ti4O12 (CCTO), thin film has been deposited by the soft chemical method on Pt/Ti/SiO2/Si (1 0 0) substrates at 700 degrees C for 2 h. The peaks were indexed as cubic phase belonging to the Im-3 space group. The film exhibited a duplex microstructure consisting of large grains of 130 nm in length and regions of fine grains (less than 80 nm). The CCTO film capacitor showed a dielectric loss of 0.031 and a dielectric permittivity of 1020 at 1 MHz. The J-V behavior is completely symmetrical, regardless of whether the conduction is limited by interfacial barriers or by bulk-like mechanisms. Based on impedance analyses, the equivalent circuit of CCTO film consisting of a resistor connected in series with two resistor-capacitor (RC) elements. (C) 2011 Elsevier B.V. All rights reserved. | |
dc.language | eng | |
dc.publisher | Elsevier B.V. Sa | |
dc.relation | Journal of Alloys and Compounds | |
dc.relation | 3.779 | |
dc.relation | 1,020 | |
dc.rights | Acesso aberto | |
dc.source | Web of Science | |
dc.subject | Thin films | |
dc.subject | Dielectrics | |
dc.subject | Chemical synthesis | |
dc.subject | X-ray diffraction | |
dc.title | Dielectric properties of soft chemical method derived CaCu3Ti4O12 thin films onto Pt/TiO2/Si(100) substrates | |
dc.type | Artigo | |