dc.contributorUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T15:30:15Z
dc.date.accessioned2022-10-05T16:58:18Z
dc.date.available2014-05-20T15:30:15Z
dc.date.available2022-10-05T16:58:18Z
dc.date.created2014-05-20T15:30:15Z
dc.date.issued2006-05-01
dc.identifierJournal of Solid State Chemistry. San Diego: Academic Press Inc. Elsevier B.V., v. 179, n. 5, p. 1330-1334, 2006.
dc.identifier0022-4596
dc.identifierhttp://hdl.handle.net/11449/39686
dc.identifier10.1016/j.jssc.2006.01.046
dc.identifierWOS:000237528900007
dc.identifier4284809342546287
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/3910750
dc.description.abstractGallium-doped zinc oxide (ZnO:Ga 1, 2 3, 4 and 5 at%) samples were prepared in powder form by modifying the Pechini method. The formation of zinc gallate (ZnGa2O4) With the spinel crystal structure was observed even in ZnO:Ga 1 at% by X-ray diffraction. The presence of ZnGa2O4 in ZnO:Ga samples was also evidenced by luminescence spectroscopy through its blue emission at 430 nm, assigned to charge transfer between Ga3+ at regular octahedral symmetry and its surrounding O2- ions. The amount of ZnGa2O4 increases as the dopant concentration increases, as observed by the quantitative phase analysis by the Rietveld method. (C) 2006 Elsevier B.V. All rights reserved.
dc.languageeng
dc.publisherElsevier B.V.
dc.relationJournal of Solid State Chemistry
dc.relation2.179
dc.relation0,632
dc.rightsAcesso restrito
dc.sourceWeb of Science
dc.subjectzinc gallate
dc.subjectimpurities in semiconductors
dc.subjectcrystal structure and symmetry
dc.subjectoptical properties
dc.subjectdoping
dc.subjectZnO : Ga
dc.subjectZnGa3O4
dc.subjectPechini method
dc.titleThe effects of ZnGa2O4 formation on structural and optical properties of ZnO : Ga powders
dc.typeArtigo


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