The effect of Nb doping on ferroelectric properties of PZT thin films prepared from polymeric precursors

dc.contributorLIEC
dc.contributorUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T15:30:07Z
dc.date.accessioned2022-10-05T16:57:27Z
dc.date.available2014-05-20T15:30:07Z
dc.date.available2022-10-05T16:57:27Z
dc.date.created2014-05-20T15:30:07Z
dc.date.issued2004-11-15
dc.identifierMaterials Chemistry and Physics. Lausanne: Elsevier B.V. Sa, v. 88, n. 1, p. 155-159, 2004.
dc.identifier0254-0584
dc.identifierhttp://hdl.handle.net/11449/39566
dc.identifier10.1016/j.matchemphys.2004.06.035
dc.identifierWOS:000224370900027
dc.identifier9128353103083394
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/3910651
dc.description.abstractPure and Nb doped PbZr0.4Ti0.603 thin films was prepared by the polymeric precursor method and deposited by spin coating on Pt/Ti/SiO2/Si (100) substrates and annealed at 700 degreesC. The films are oriented in (1 1 0) and (1 0 0) direction. The electric properties of PZT thin films show strong dependence of the crystallographic orientation. The P-E hysteresis loops for the thin film with composition PbZr0.39Ti0.6Nb0.103 showed good saturation, with values for coercive field (E-c) equal to 60 KV cm(-1) and for remanent polarization (P-r) equal to 20 muC cm(-2). The measured dielectric constant (epsilon) is 1084 for this film. These results show good potential for application in FERAM. (C) 2004 Elsevier B.V. All rights reserved.
dc.languageeng
dc.publisherElsevier B.V.
dc.relationMaterials Chemistry and Physics
dc.relation2.210
dc.relation0,615
dc.rightsAcesso restrito
dc.sourceWeb of Science
dc.subjectPZT
dc.subjectNb doped PZT
dc.subjectFERAM
dc.subjectpolymeric precursor
dc.titleThe effect of Nb doping on ferroelectric properties of PZT thin films prepared from polymeric precursors
dc.typeArtigo


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