High Curie point CaBi2Nb2O9 thin films: A potential candidate for lead-free thin-film piezoelectrics

dc.contributorUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T15:24:33Z
dc.date.accessioned2022-10-05T16:28:58Z
dc.date.available2014-05-20T15:24:33Z
dc.date.available2022-10-05T16:28:58Z
dc.date.created2014-05-20T15:24:33Z
dc.date.issued2006-10-01
dc.identifierJournal of Applied Physics. Melville: Amer Inst Physics, v. 100, n. 7, 4 p., 2006.
dc.identifier0021-8979
dc.identifierhttp://hdl.handle.net/11449/35136
dc.identifier10.1063/1.2357419
dc.identifierWOS:000241248000067
dc.identifierWOS000241248000067.pdf
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/3907136
dc.description.abstractCaBi2Nb2O9 (CBNO) thin films deposited on platinum coated silicon substrates by the polymeric precursor method exhibited good structural, dielectric, and piezoelectric characteristics. Capacitance-voltage measurements indicated good ferroelectric polarization switching characteristics. Remanent polarization and drive voltage values were 4.2 mu C/cm(2) and 1.7 V for a maximum applied voltage of 10 V. The film has a piezoelectric coefficient d(33) equal to 60 pm/V, current density of 0.7 mu A/cm(2), and Curie temperature of 940 degrees C. The polar-axis-oriented CBNO is a promising candidate for use in lead-free high Curie point in ferroelectric and piezoelectric devices. (c) 2006 American Institute of Physics.
dc.languageeng
dc.publisherAmerican Institute of Physics (AIP)
dc.relationJournal of Applied Physics
dc.relation2.176
dc.relation0,739
dc.rightsAcesso restrito
dc.sourceWeb of Science
dc.titleHigh Curie point CaBi2Nb2O9 thin films: A potential candidate for lead-free thin-film piezoelectrics
dc.typeArtigo


Este ítem pertenece a la siguiente institución