dc.contributor | Universidade Estadual de Campinas (UNICAMP) | |
dc.contributor | Univ Puerto Rico | |
dc.contributor | Universidade Estadual Paulista (Unesp) | |
dc.contributor | Lab Nacl Luz Sincrotron | |
dc.contributor | San Diego State Univ | |
dc.date.accessioned | 2014-05-20T15:23:47Z | |
dc.date.accessioned | 2022-10-05T16:24:11Z | |
dc.date.available | 2014-05-20T15:23:47Z | |
dc.date.available | 2022-10-05T16:24:11Z | |
dc.date.created | 2014-05-20T15:23:47Z | |
dc.date.issued | 2006-10-01 | |
dc.identifier | IEEE Transactions on Magnetics. Piscataway: IEEE-Inst Electrical Electronics Engineers Inc., v. 42, n. 10, p. 2700-2702, 2006. | |
dc.identifier | 0018-9464 | |
dc.identifier | http://hdl.handle.net/11449/34493 | |
dc.identifier | 10.1109/TMAG.2006.878845 | |
dc.identifier | WOS:000240888700148 | |
dc.identifier | 1134426200935790 | |
dc.identifier.uri | http://repositorioslatinoamericanos.uchile.cl/handle/2250/3906620 | |
dc.description.abstract | Amorphous and crystalline thin films of Mn-doped(0.5%-10%) GaAs and crystalline thin films of Zn1-xCoxO(x = 3%-20%) were investigated by means of magnetic susceptibility and electron spin resonance (ESR). For the Mn-doped GaAs samples, our results show the absence of ferromagnetic ordering for the amorphous films in the 300 > T > 2 K temperature range, in contrast to the ferromagnetism found in crystalline films for T-C < 110 K. A single ESR line with a temperature independent g-value (g similar to 2) is observed for the amorphous films, and the behavior of this ESR linewidth depends on the level of crystallinity of the film. For the Mn-doped GaAs crystalline films, only a ferromagnetic mode is observed for T < TC when the film is ferromagnetic. Turning now the Zn1-xCoxO films, ferromagnetic loops were observed at room temperature for these films. The magnetization data show an increasing of the saturation magnetization M. as a function of x reaching a maximum value for x approximate to 10%. ESR experiments at T = 300 K in the same films show a strong anisotropic ferromagnetic mode (FMR) for x = 0.10. | |
dc.language | eng | |
dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) | |
dc.relation | IEEE Transactions on Magnetics | |
dc.relation | 1.467 | |
dc.relation | 0,488 | |
dc.rights | Acesso restrito | |
dc.source | Web of Science | |
dc.subject | dilute ferromagnetic semiconductors | |
dc.subject | electron spin resonance | |
dc.subject | magnetization curves | |
dc.title | Local and global magnetic properties of Zn1-xCoxO and Mn-doped GaAs thin films | |
dc.type | Artigo | |