dc.contributor | Universidade Federal de São Carlos (UFSCar) | |
dc.contributor | Universidade Estadual Paulista (Unesp) | |
dc.date.accessioned | 2014-05-20T15:21:18Z | |
dc.date.accessioned | 2022-10-05T16:10:18Z | |
dc.date.available | 2014-05-20T15:21:18Z | |
dc.date.available | 2022-10-05T16:10:18Z | |
dc.date.created | 2014-05-20T15:21:18Z | |
dc.date.issued | 2000-04-24 | |
dc.identifier | Applied Physics Letters. Melville: Amer Inst Physics, v. 76, n. 17, p. 2433-2435, 2000. | |
dc.identifier | 0003-6951 | |
dc.identifier | http://hdl.handle.net/11449/32464 | |
dc.identifier | 10.1063/1.126367 | |
dc.identifier | WOS:000086538700037 | |
dc.identifier | WOS000086538700037.pdf | |
dc.identifier.uri | http://repositorioslatinoamericanos.uchile.cl/handle/2250/3905014 | |
dc.description.abstract | The dielectric properties of (Ba, Sr)TiO3 films were found to be remarkably sensitive to the postannealing treatment atmosphere. This study demonstrates that postannealing in an oxygen atmosphere increases the dielectric relaxation phenomenon and that postannealing in a nitrogen atmosphere produces a slight dielectric relaxation. Such dependence of the dielectric relaxation was related both to oxygen vacancies and to the presence of negatively charged oxygen, trapped at the grain boundary and/or at the electrode/dielectric film interface. (C) 2000 American Institute of Physics. [S0003-6951(00)00817-2]. | |
dc.language | eng | |
dc.publisher | American Institute of Physics (AIP) | |
dc.relation | Applied Physics Letters | |
dc.relation | 3.495 | |
dc.relation | 1,382 | |
dc.rights | Acesso restrito | |
dc.source | Web of Science | |
dc.title | Effects of the postannealing atmosphere on the dielectric properties of (Ba, Sr)TiO3 capacitors: Evidence of an interfacial space charge layer | |
dc.type | Artigo | |