dc.contributorUniversidade Federal de São Carlos (UFSCar)
dc.contributorUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T15:21:18Z
dc.date.accessioned2022-10-05T16:10:18Z
dc.date.available2014-05-20T15:21:18Z
dc.date.available2022-10-05T16:10:18Z
dc.date.created2014-05-20T15:21:18Z
dc.date.issued2000-04-24
dc.identifierApplied Physics Letters. Melville: Amer Inst Physics, v. 76, n. 17, p. 2433-2435, 2000.
dc.identifier0003-6951
dc.identifierhttp://hdl.handle.net/11449/32464
dc.identifier10.1063/1.126367
dc.identifierWOS:000086538700037
dc.identifierWOS000086538700037.pdf
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/3905014
dc.description.abstractThe dielectric properties of (Ba, Sr)TiO3 films were found to be remarkably sensitive to the postannealing treatment atmosphere. This study demonstrates that postannealing in an oxygen atmosphere increases the dielectric relaxation phenomenon and that postannealing in a nitrogen atmosphere produces a slight dielectric relaxation. Such dependence of the dielectric relaxation was related both to oxygen vacancies and to the presence of negatively charged oxygen, trapped at the grain boundary and/or at the electrode/dielectric film interface. (C) 2000 American Institute of Physics. [S0003-6951(00)00817-2].
dc.languageeng
dc.publisherAmerican Institute of Physics (AIP)
dc.relationApplied Physics Letters
dc.relation3.495
dc.relation1,382
dc.rightsAcesso restrito
dc.sourceWeb of Science
dc.titleEffects of the postannealing atmosphere on the dielectric properties of (Ba, Sr)TiO3 capacitors: Evidence of an interfacial space charge layer
dc.typeArtigo


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