Artigo
Effect of hydrogenation on the optical and structural properties of GaAs thin films prepared by rf-magnetron sputtering
Fecha
2005-08-01Registro en:
Nuclear Instruments & Methods In Physics Research Section B-beam Interactions With Materials and Atoms. Amsterdam: Elsevier B.V., v. 238, n. 1-4, p. 329-333, 2005.
0168-583X
10.1016/j.nimb.2005.06.071
WOS:000232390400069
Autor
Lab Nacl Luz Sincrotron
Universidade Estadual Paulista (Unesp)
Univ Costa Rica
Resumen
We have utilized infra-red and optical absorption measurements, grazing incidence X-ray diffraction (GIXRD) and extended X-ray absorption fine structure (EXAFS) measurements to investigate the influence of hydrogenation on the optical and structural properties of GaAs thin films prepared by rf-magnetron sputtering. Hydrogenation induces distinct changes in the optical properties, namely shifts in the absorption edges and reduction of the Urbach energy. Such modifications are correlated to a reduction in structural disorder as determined by EXAFS and the increase of crystallinity determined by GIXRD. (c) 2005 Elsevier B.V. All rights reserved.