Photoelectrochemical properties of sol-gel Nb2O5 films

dc.contributorUniversidade Estadual Paulista (Unesp)
dc.contributorINST NEUE MAT
dc.date.accessioned2014-05-20T15:20:17Z
dc.date.accessioned2022-10-05T16:04:54Z
dc.date.available2014-05-20T15:20:17Z
dc.date.available2022-10-05T16:04:54Z
dc.date.created2014-05-20T15:20:17Z
dc.date.issued1997-01-01
dc.identifierJournal of Sol-gel Science and Technology. Dordrecht: Kluwer Academic Publ, v. 8, n. 1-3, p. 735-742, 1997.
dc.identifier0928-0707
dc.identifierhttp://hdl.handle.net/11449/31621
dc.identifier10.1007/BF02436932
dc.identifierWOS:A1997WQ33400123
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/3904342
dc.description.abstractStructural, optical, electro and photoelectrochemical properties of amorphous and crystalline sol-gel Nb2O5 coatings have been determined. The coatings are n-type semiconductor with indirect allowed transition and present an overall low quantum efficiency (phi < 4%) for UV light to electric conversion. The photoconducting behavior of the coatings is discussed within the framework of the Gartner and Sodergren models. Improvement can be foreseen if Nb2O5 coatings can be made of 10-20 nm size nanoparticles.
dc.languageeng
dc.publisherKluwer Academic Publ
dc.relationJournal of Sol-Gel Science and Technology
dc.relation1.745
dc.relation0,477
dc.rightsAcesso restrito
dc.sourceWeb of Science
dc.subjectsol-gel
dc.subjectNb2O5
dc.subjectfilm
dc.subjectphotoconductivity
dc.subjectphotoelectrochemistry
dc.subjectsemiconductor
dc.subjectsolar cell
dc.titlePhotoelectrochemical properties of sol-gel Nb2O5 films
dc.typeArtigo


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