Structure and ferro/piezoelectric properties of SrBi(4)Ti(4)O(15) films deposited on TiO(2) buffer layer

dc.contributorUniversidade Federal de Itajubá (UNIFEI)
dc.contributorUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T14:18:38Z
dc.date.accessioned2022-10-05T15:16:43Z
dc.date.available2014-05-20T14:18:38Z
dc.date.available2022-10-05T15:16:43Z
dc.date.created2014-05-20T14:18:38Z
dc.date.issued2009-05-27
dc.identifierJournal of Alloys and Compounds. Lausanne: Elsevier B.V. Sa, v. 477, n. 1-2, p. 85-89, 2009.
dc.identifier0925-8388
dc.identifierhttp://hdl.handle.net/11449/25620
dc.identifier10.1016/j.jallcom.2008.10.138
dc.identifierWOS:000266386400029
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/3898703
dc.description.abstractTiO(2) buffer layer was introduced between SrBi(4)Ti(4)O(15) (SBTi) thin films and Pt bottom electrodes through the soft chemical solution. The obtained films were characterized by X-ray diffraction, atomic force microscopy and electrical properties. Unlike thin film crystallized directly onto a highly (1 1 1)-oriented Pt bottom electrode, the thin film on TiO(2) buffer layer was a single phase perovskite with random orientation. The dielectric and ferroelectric properties of the SBTi/TiO(2) thin films deposited on Pt coated Si substrates are evaluated, leading to the potential of the TiO(2) buffer layer for the integrated devices. Meanwhile, SBTi thin films deposited directly on (1 1 1) Pt bottom electrode reveal a weak ferroelectricity along c-axis direction. (C) 2008 Published by Elsevier B.V.
dc.languageeng
dc.publisherElsevier B.V. Sa
dc.relationJournal of Alloys and Compounds
dc.relation3.779
dc.relation1,020
dc.rightsAcesso restrito
dc.sourceWeb of Science
dc.subjectThin films
dc.subjectBuffer layer
dc.subjectBismuth layered compounds
dc.titleStructure and ferro/piezoelectric properties of SrBi(4)Ti(4)O(15) films deposited on TiO(2) buffer layer
dc.typeArtigo


Este ítem pertenece a la siguiente institución