Relationship between grain-boundary capacitance and bulk shallow donors in SnO2 polycrystalline semiconductor

dc.contributorUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T14:18:36Z
dc.date.accessioned2022-10-05T15:16:38Z
dc.date.available2014-05-20T14:18:36Z
dc.date.available2022-10-05T15:16:38Z
dc.date.created2014-05-20T14:18:36Z
dc.date.issued2008-07-01
dc.identifierPhysica Status Solidi A-applications and Materials Science. Weinheim: Wiley-v C H Verlag Gmbh, v. 205, n. 7, p. 1694-1698, 2008.
dc.identifier1862-6300
dc.identifierhttp://hdl.handle.net/11449/25609
dc.identifier10.1002/pssa.200723355
dc.identifierWOS:000257828100031
dc.identifier0477045906733254
dc.identifier0000-0003-2827-0208
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/3898692
dc.description.abstractThe relationship between grain-boundary capacitance and extrinsic shallow donors caused by Nb addition to SnO2 center dot COO binary polycrystalline system has been investigated by means of combined techniques such as I-V characteristic response, complex impedance and capacitance analysis and electrostatic force microscopy. The estimated role of the Nb doping is to increase the concentration of shallow donors that are capable of enhancing the electronic donation to grain-boundary acceptors. This effect leads to the formation of potential barriers at grain boundaries with a simultaneous increase of grain-boundary capacitance and non-Ohmic features of the polycrystalline device doped with Nb atoms.
dc.languageeng
dc.publisherWiley-v C H Verlag Gmbh
dc.relationPhysica Status Solidi A: Applications and Materials Science
dc.relation1.795
dc.relation0,648
dc.rightsAcesso restrito
dc.sourceWeb of Science
dc.titleRelationship between grain-boundary capacitance and bulk shallow donors in SnO2 polycrystalline semiconductor
dc.typeArtigo


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