Resistive-Switching Behavior in Polycrystalline CaCu3Ti4O12 Nanorods

dc.contributorUniversidade Estadual Paulista (Unesp)
dc.contributorCtr Tecnol Informação Renato Archer CTI
dc.contributorUniversidade Estadual de Campinas (UNICAMP)
dc.date.accessioned2014-05-20T14:18:31Z
dc.date.accessioned2022-10-05T15:16:24Z
dc.date.available2014-05-20T14:18:31Z
dc.date.available2022-10-05T15:16:24Z
dc.date.created2014-05-20T14:18:31Z
dc.date.issued2011-02-01
dc.identifierAcs Applied Materials & Interfaces. Washington: Amer Chemical Soc, v. 3, n. 2, p. 500-504, 2011.
dc.identifier1944-8244
dc.identifierhttp://hdl.handle.net/11449/25581
dc.identifier10.1021/am101079g
dc.identifierWOS:000287639400054
dc.identifier0477045906733254
dc.identifier0000-0003-2827-0208
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/3898664
dc.description.abstractHighly aligned CaCu3Ti4O12 nanorod arrays were grown on Si/SiO2/Ti/Pt substrates by radio-frequency sputtering at a low deposition temperature of 300 degrees C and room temperature. Structural and morphological studies have shown that the nanostructures have a polycrystalline nature and are oriented perpendicular to the substrate. The high density of grain boundaries in the nanorods is responsible for the nonlinear current behavior observed in these arrays. The current-voltage (I-V) characteristics observed in nanorods were attributed to the resistive memory phenomenon. The electrical resistance of microcapacitors composed of CaCu3Ti4O12 nanorods could be reversibly switched between two stable resistance states by varying the applied electric field. In order to explain this switching mechanism, a model based on the increase/decrease of electrical conduction controlled by grain boundary polarization has been proposed.
dc.languageeng
dc.publisherAmer Chemical Soc
dc.relationAcs Applied Materials & Interfaces
dc.relation8.097
dc.relation2,784
dc.rightsAcesso restrito
dc.sourceWeb of Science
dc.subjectCCTO
dc.subjectnanorods
dc.subjectdielectric
dc.subjectnonlinear I-V
dc.subjectresistive switching
dc.subjectRF sputtering
dc.titleResistive-Switching Behavior in Polycrystalline CaCu3Ti4O12 Nanorods
dc.typeArtigo


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