Influence of oxygen flow on crystallization and morphology of PLZT thin films

dc.contributorUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T14:18:02Z
dc.date.accessioned2022-10-05T15:15:09Z
dc.date.available2014-05-20T14:18:02Z
dc.date.available2022-10-05T15:15:09Z
dc.date.created2014-05-20T14:18:02Z
dc.date.issued2002-01-01
dc.identifierCeramics International. Oxford: Elsevier B.V., v. 28, n. 3, p. 271-277, 2002.
dc.identifier0272-8842
dc.identifierhttp://hdl.handle.net/11449/25422
dc.identifier10.1016/S0272-8842(01)00090-6
dc.identifierWOS:000175311600007
dc.identifier9128353103083394
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/3898527
dc.description.abstractPLZT thin films were prepared by a dip coating process using Pechini's method, also known as polymeric precursor method. The PLZT solution was obtained from a mixture of the individual cation solutions and the process to prepare each solution is based on metallic citrate polymerization. The viscosity of the PLZT solution was adjusted at 40 cP while the ionic concentration was adjusted at 0.1 M. PLZT solutions were deposited on silicon (100) and platinum coated silicon (100) substrates with withdrawal speed at 5 mm/min. The coated substrates were thermally treated with a heating rate of 1 degreesC/min up to 300 degreesC and 5 degreesC/min up to 650 degreesC in order to obtain homogeneous and cracks free films. The influence of oxygen flow on crystallization and morphology of PLZT (9/65/35) thin film is discussed. (C) 2002 Elsevier B.V. Ltd and Techna S.r.l. All rights reserved.
dc.languageeng
dc.publisherElsevier B.V.
dc.relationCeramics International
dc.relation3.057
dc.relation0,784
dc.rightsAcesso restrito
dc.sourceWeb of Science
dc.subjectfilms
dc.subjectelectron microcospy
dc.subjectsurfaces
dc.subjectX-ray methods
dc.subjectPLZT
dc.titleInfluence of oxygen flow on crystallization and morphology of PLZT thin films
dc.typeArtigo


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