Synthesis and characterization of CaBi4Ti4O15 thin films annealed by microwave and conventional furnaces

dc.contributorUniversidade Federal de São Carlos (UFSCar)
dc.contributorUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T14:17:56Z
dc.date.accessioned2022-10-05T15:14:51Z
dc.date.available2014-05-20T14:17:56Z
dc.date.available2022-10-05T15:14:51Z
dc.date.created2014-05-20T14:17:56Z
dc.date.issued2007-08-01
dc.identifierSolid State Sciences. Amsterdam: Elsevier B.V., v. 9, n. 8, p. 756-760, 2007.
dc.identifier1293-2558
dc.identifierhttp://hdl.handle.net/11449/25383
dc.identifier10.1016/j.solidstatesciences.2007.05.003
dc.identifierWOS:000249522400017
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/3898494
dc.description.abstractCaBi4Ti4O15 thin films were deposited by the polymeric precursor method and crystallized in a domestic microwave oven and conventional furnace. The films obtained for microwave energy are well-adhered, homogeneous and with good specularity, when treated at 700 degrees C for 10 min. The microstructure and the structure of the films can be tuned by adjusting the crystallization conditions. When microwave oven is employed, the films presented bigger grains with mean grain size around 80 nm. For comparison, films were also prepared by the conventional furnace at 700 degrees C for 2 h. (C) 2007 Elsevier Masson SAS. All rights reserved.
dc.languageeng
dc.publisherElsevier B.V.
dc.relationSolid State Sciences
dc.relation1.861
dc.relation0,574
dc.rightsAcesso restrito
dc.sourceWeb of Science
dc.subjectbismuth layer
dc.subjectcrystallization
dc.subjectmicrowave oven
dc.subjectferroelectric properties
dc.titleSynthesis and characterization of CaBi4Ti4O15 thin films annealed by microwave and conventional furnaces
dc.typeArtigo


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