dc.contributorUniversidade Estadual Paulista (Unesp)
dc.contributorUniversidade Federal do Ceará (UFC)
dc.contributorUniv Aveiro
dc.date.accessioned2014-05-20T13:29:46Z
dc.date.accessioned2022-10-05T13:29:59Z
dc.date.available2014-05-20T13:29:46Z
dc.date.available2022-10-05T13:29:59Z
dc.date.created2014-05-20T13:29:46Z
dc.date.issued2012-05-30
dc.identifierJournal of Physics D-applied Physics. Bristol: Iop Publishing Ltd, v. 45, n. 21, p. 6, 2012.
dc.identifier0022-3727
dc.identifierhttp://hdl.handle.net/11449/10070
dc.identifier10.1088/0022-3727/45/21/215304
dc.identifierWOS:000304056100011
dc.identifier6725982228402054
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/3886291
dc.description.abstractThe structural properties of Pb(Zr0.50Ti0.50)O-3 thin films with no preferential orientation were studied throughout the film thickness. An analysis on depth profile shows the existence of a significant (1 0 0) alignment near the film-electrode interface. Nanoscale piezoelectric measurements demonstrate the existence of a self-polarization effect in the studied films. An increase in this effect with film thickness increasing from 200 to 710 nm suggests that Schottky barriers and/or mechanical coupling near the film-electrode interface cannot be the main mechanisms responsible for the self-polarization effect in the studied films.
dc.languageeng
dc.publisherIop Publishing Ltd
dc.relationJournal of Physics D: Applied Physics
dc.relation2.373
dc.relation0,717
dc.rightsAcesso restrito
dc.sourceWeb of Science
dc.titleStructural depth profile and nanoscale piezoelectric properties of randomly oriented Pb(Zr0.50Ti0.50)O-3 thin films
dc.typeArtigo


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