Light Absorption near Threshold with Phonon Participation for Impurities in Semiconductors

dc.creatorAmato, Angélica Amorim
dc.date.accessioned2017-12-07T04:37:06Z
dc.date.accessioned2022-10-04T14:24:21Z
dc.date.available2017-12-07T04:37:06Z
dc.date.available2022-10-04T14:24:21Z
dc.date.created2017-12-07T04:37:06Z
dc.date.issued2002
dc.identifierRev. Bras. Ensino Fís.,v.24,n.4,p.379-382,2002
dc.identifierhttp://repositorio.unb.br/handle/10482/25956
dc.identifierhttps://dx.doi.org/10.1590/S1806-11172002000400003
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/3854499
dc.description.abstractIt is presented a simple model for the calculation of the transition rate for impurities in semiconductors in which electron-phonon interaction is taken into account in a second order time dependent perturbation theory. This result shows the explicit dependence of the transition rate on the phonon density of states and that the absorption curve of a semiconductor is modulated by the phonon structure.
dc.languageen
dc.publisherSociedade Brasileira de Física
dc.rightsAcesso Aberto
dc.titleLight Absorption near Threshold with Phonon Participation for Impurities in Semiconductors
dc.typeArtículos de revistas


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