Brasil | Artículos de revistas

Photoacoustic and transmission studies of SiC polytypes

dc.creatorOliveira, A.C. de
dc.creatorFreitas Jr., J.A.
dc.creatorMoore, W.J.
dc.creatorFerreira da Silva, A.
dc.creatorPepe, I.
dc.creatorAlmeida, J. Souza de
dc.creatorBraga, G.C.B.
dc.creatorOsório-Guillen, J.M.
dc.creatorPersson, C.
dc.creatorAhuja, R.
dc.date.accessioned2017-12-07T04:38:40Z
dc.date.accessioned2022-10-04T12:38:11Z
dc.date.available2017-12-07T04:38:40Z
dc.date.available2022-10-04T12:38:11Z
dc.date.created2017-12-07T04:38:40Z
dc.date.issued2003
dc.identifierMat. Res.,v.6,n.1,p.47-49,2003
dc.identifierhttp://repositorio.unb.br/handle/10482/26100
dc.identifierhttps://dx.doi.org/10.1590/S1516-14392003000100009
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/3848040
dc.description.abstractThe optical bandgap energies (OBGE) of 3C, 15R, 6H and 4H-SiC have been investigate experimentally by transmission and photoacoustic spectroscopies. The measurements were performed on 470 mum thick wafers. The OBGE obtained from both spectroscopies for different polytypes show very good agreement. In order to have a better understanding of these materials calculations of eletronic band structure were performed by the full-potential linearized augmented plane wave (FPLAPW) method. For the OBGE the results are compared to the measurements agreeing closely over the energies of those polytypes.
dc.languageen
dc.publisherABM, ABC, ABPol
dc.rightsAcesso Aberto
dc.titlePhotoacoustic and transmission studies of SiC polytypes
dc.typeArtículos de revistas


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