| dc.description.abstract | In this work, we investigate the growth process and structure of epitaxial graphene grown on the C-face of silicon carbide (SiC) substrates. The growth was performed at atmospheric pressure in a furnace with an Argon (Ar) environment. The graphene production happens at about 1775º C. At this condition, the silicon atoms sublimate and the remaining carbon atoms on the surface bind with sp2 hibridization. X-ray diffraction,Raman spectroscopy and atomic force microscopy was used to characterize the material produced. Analyses of Raman spectra showed a material with structure similar to graphene. Moreover, X-ray diffraction indicated the presence of many layers of graphene, with interplanar distances between the Bernal and turbostratic graphite. These resultsdemonstrate that the prepared material can be considered a decoupled graphite, where the interaction between planes is weak with each other, behaving like an isolated graphene. Therefore, this material has great potential for applications in microelectronics, and can even show advantages compared to monolayer graphene, as it will become clear in this Master dissertation. | |
