dc.creator | Senior D.E. | |
dc.creator | Cheng X. | |
dc.creator | Yoon, Y.K. | |
dc.date.accessioned | 2020-03-26T16:32:57Z | |
dc.date.available | 2020-03-26T16:32:57Z | |
dc.date.created | 2020-03-26T16:32:57Z | |
dc.date.issued | 2012 | |
dc.identifier | IEEE Microwave and Wireless Components Letters; Vol. 22, Núm. 3; pp. 123-125 | |
dc.identifier | 15311309 | |
dc.identifier | https://hdl.handle.net/20.500.12585/9101 | |
dc.identifier | 10.1109/LMWC.2012.2183860 | |
dc.identifier | Universidad Tecnológica de Bolívar | |
dc.identifier | Repositorio UTB | |
dc.identifier | 36698427600 | |
dc.identifier | 37101227200 | |
dc.identifier | 7402126778 | |
dc.description.abstract | Electrically tunable evanescent mode half mode substrate integrated waveguide (HMSIW) resonators are implemented for S band applications. An HMSIW loaded with a complementary split ring resonator (CSRR) achieves forward electromagnetic wave transmission below the characteristic waveguide cutoff frequency due to evanescent wave amplification. A variable capacitor connected to one of the conductors of the CSRR changes its effective capacitance to ground, resulting in frequency tuning of the resonator. Three different configurations are investigated with a varactor diode connected between the ground and three different contact points of the CSRR. The external Q factor is slightly affected by the frequency tuning. More than 15% tunability is achieved around 3.4 GHz. Full wave structure simulation results are in good agreement with those of measurement. © 2006 IEEE. | |
dc.language | eng | |
dc.rights | http://creativecommons.org/licenses/by-nc-nd/4.0/ | |
dc.rights | info:eu-repo/semantics/restrictedAccess | |
dc.rights | Atribución-NoComercial 4.0 Internacional | |
dc.source | https://www.scopus.com/inward/record.uri?eid=2-s2.0-84858437519&doi=10.1109%2fLMWC.2012.2183860&partnerID=40&md5=e23ce39923a0953121027c95a4dc872c | |
dc.title | Electrically tunable evanescent mode half-mode substrate-integrated- waveguide resonators | |