dc.creatorSenior D.E.
dc.creatorCheng X.
dc.creatorYoon, Y.K.
dc.date.accessioned2020-03-26T16:32:57Z
dc.date.available2020-03-26T16:32:57Z
dc.date.created2020-03-26T16:32:57Z
dc.date.issued2012
dc.identifierIEEE Microwave and Wireless Components Letters; Vol. 22, Núm. 3; pp. 123-125
dc.identifier15311309
dc.identifierhttps://hdl.handle.net/20.500.12585/9101
dc.identifier10.1109/LMWC.2012.2183860
dc.identifierUniversidad Tecnológica de Bolívar
dc.identifierRepositorio UTB
dc.identifier36698427600
dc.identifier37101227200
dc.identifier7402126778
dc.description.abstractElectrically tunable evanescent mode half mode substrate integrated waveguide (HMSIW) resonators are implemented for S band applications. An HMSIW loaded with a complementary split ring resonator (CSRR) achieves forward electromagnetic wave transmission below the characteristic waveguide cutoff frequency due to evanescent wave amplification. A variable capacitor connected to one of the conductors of the CSRR changes its effective capacitance to ground, resulting in frequency tuning of the resonator. Three different configurations are investigated with a varactor diode connected between the ground and three different contact points of the CSRR. The external Q factor is slightly affected by the frequency tuning. More than 15% tunability is achieved around 3.4 GHz. Full wave structure simulation results are in good agreement with those of measurement. © 2006 IEEE.
dc.languageeng
dc.rightshttp://creativecommons.org/licenses/by-nc-nd/4.0/
dc.rightsinfo:eu-repo/semantics/restrictedAccess
dc.rightsAtribución-NoComercial 4.0 Internacional
dc.sourcehttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84858437519&doi=10.1109%2fLMWC.2012.2183860&partnerID=40&md5=e23ce39923a0953121027c95a4dc872c
dc.titleElectrically tunable evanescent mode half-mode substrate-integrated- waveguide resonators


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