dc.creatorKim C.
dc.creatorSenior D.E.
dc.creatorShorey A.
dc.creatorKim H.J.
dc.creatorThomas W.
dc.creatorYoon, Y.K.
dc.date.accessioned2020-03-26T16:32:52Z
dc.date.available2020-03-26T16:32:52Z
dc.date.created2020-03-26T16:32:52Z
dc.date.issued2014
dc.identifierProceedings - Electronic Components and Technology Conference; pp. 1103-1109
dc.identifier9781479924073
dc.identifier05695503
dc.identifierhttps://hdl.handle.net/20.500.12585/9063
dc.identifier10.1109/ECTC.2014.6897427
dc.identifierUniversidad Tecnológica de Bolívar
dc.identifierRepositorio UTB
dc.identifier56021218700
dc.identifier36698427600
dc.identifier6601969625
dc.identifier56382312300
dc.identifier55670976200
dc.identifier7402126778
dc.description.abstractHigh quality and compact RF devices, using the half mode substrate integrated waveguide (HMSIW) architecture loaded with a complementary split ring resonator (CSRR), are implemented on a glass interposer layer, which therefore serves as an interconnection layer and as a host medium for integrated passive RF components. Compared with the silicon interposer approach, which suffers from large electrical conductivity and therefore substrate loss, the glass interposer has advantages of low substrate loss, allowing high quality interconnection and passive circuits, and low material and manufacturing costs. Corning fusion glass is selected as the substrate to realize the compact CSRR-loaded HMSIW resonators and bandpass filters (BPFs) working under the principle of evanescent wave amplification. Two and three pole bandpass filters are designed for broadband operation at 5.8 GHz. Thru glass vias (TGVs) are used to define the side-wall of the substrate integrated waveguiding structure. Surface micromachining techniques are used to fabricate the proposed devices. The variations of the external quality factor (Qe) of the resonator and the internal coupling coefficient (M) of the coupled resonators are studied for filter design. Operation of the filters at 5.8 GHz with a fractional bandwidth (FBW) of more than 10% for an in-band return loss of better than 20 dB and an low insertion loss of less than 1.35 dB has been obtained, which is not feasible with a usual Si interposer approach. Measurement results are presented from 2 to 10 GHz and show good agreement with simulated ones. © 2014 IEEE.
dc.languageeng
dc.publisherInstitute of Electrical and Electronics Engineers Inc.
dc.relation27 May 2014 through 30 May 2014
dc.rightshttp://creativecommons.org/licenses/by-nc-nd/4.0/
dc.rightsinfo:eu-repo/semantics/restrictedAccess
dc.rightsAtribución-NoComercial 4.0 Internacional
dc.sourcehttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84907893946&doi=10.1109%2fECTC.2014.6897427&partnerID=40&md5=959d65fd4b1421e1ee83128bbb024cbb
dc.sourceScopus2-s2.0-84907893946
dc.source64th Electronic Components and Technology Conference, ECTC 2014
dc.titleThrough-glass interposer integrated high quality RF components


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