| dc.creator | Enders Neto, Bernhard Georg | |
| dc.creator | Lima, Fábio Menezes de Souza | |
| dc.creator | Fonseca, Antonio Luciano de Almeida | |
| dc.creator | Nunes, O. A. C. | |
| dc.creator | Silva Júnior, Eronides Felisberto da | |
| dc.date | 2010-12-10T12:55:52Z | |
| dc.date | 2010-12-10T12:55:52Z | |
| dc.date | 2009-04 | |
| dc.date.accessioned | 2017-03-07T12:23:24Z | |
| dc.date.available | 2017-03-07T12:23:24Z | |
| dc.identifier | ENDERS NETO, B. G. et al. Effect of non-abrupt doping and interfacial profiles on the carrier sheet density in one-side modulation-doped GaN/AlGaN quantum wells. Brazilian Journal of Physics, São Paulo, v. 39, n, 1A, p. 252-255, abr. 2009. Disponível em: <http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332009000200023&lng=pt&nrm=iso>. Acesso em: 01 dez. 2010. | |
| dc.identifier | http://repositorio.unb.br/handle/10482/6152 | |
| dc.identifier.uri | http://repositorioslatinoamericanos.uchile.cl/handle/2250/349301 | |
| dc.description | The results of an accurate theoretical study on the effects of non-abrupt doping and interfacial profiles on the electron sheet density in one-side modulation-doped wurtzite GaN/AlGaN single quantum wells at low temperatures are presented. We solve coupled Schr¨odinger and Poisson equations self-consistently via the finite difference method. By employing a proper discretization on a nonuniform grid and taking into account the strong piezoelectric and spontaneous polarization fields exhibited by the wurtzite III-nitride heterostructures, a substantial increase in the 2DEG density is predicted with the increase of the donor diffusion length and the reduction of the spacer thickness. | |
| dc.language | eng | |
| dc.rights | Open Access | |
| dc.subject | Elétrons | |
| dc.subject | Física quântica | |
| dc.title | Effect of non-abrupt doping and interfacial profiles on the carrier sheet density in one-side modulation-doped GaN/AlGaN quantum wells | |
| dc.type | Artículos de revistas | |
