Physical Design to Verify Theoretical 0.1 PPM/°C Stability in a Bandgap Type Circuit

dc.creatorPolanco, Alicia
dc.creatorNagy, Agnes
dc.creatorAlvarez, Manel
dc.date.accessioned2011-10-13T18:24:13Z
dc.date.available2011-10-13T18:24:13Z
dc.date.created2011-10-13T18:24:13Z
dc.date.issued2011-10-13
dc.identifierhttps://hdl.handle.net/10893/1436
dc.description.abstractThe propose of this paper is the experimental validation of a temperature coefficient less than 0.2 ppm/°C, theoretically obtained in a low-voltage bandgap references type circuit, using a design method based on the linear sum of two base-emitter voltages. The experiment consists of obtaining VREF(T) from experimental measurements of base-emitter voltage in a 20 to to 100 °C interval. The measurements of VBE(T) were performed on MAT01 industrial bipolar transistors.
dc.languageen
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subjectPhysical design
dc.subjectTemperature coefficient
dc.subjectBandgap voltage references
dc.titlePhysical Design to Verify Theoretical 0.1 PPM/°C Stability in a Bandgap Type Circuit
dc.typeArtículo de revista


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