dc.contributorGobato, Yara Galvão
dc.contributorhttp://lattes.cnpq.br/7558531056409406
dc.contributorhttp://lattes.cnpq.br/5543466901202809
dc.creatorSantos, Ednilson Carlos dos
dc.date.accessioned2010-07-20
dc.date.accessioned2016-06-02T20:16:47Z
dc.date.available2010-07-20
dc.date.available2016-06-02T20:16:47Z
dc.date.created2010-07-20
dc.date.created2016-06-02T20:16:47Z
dc.date.issued2010-05-07
dc.identifierSANTOS, Ednilson Carlos dos. Polarização de spin em heteroestruturas semicondutoras contendo pontos quânticos de InAs. 2010. 73 f. Dissertação (Mestrado em Ciências Exatas e da Terra) - Universidade Federal de São Carlos, São Carlos, 2010.
dc.identifierhttps://repositorio.ufscar.br/handle/ufscar/5027
dc.description.abstractIn this work, we have studied spin polarization of carriers in a resonant tunneling diode GaAs/AlGaAs with InAs quantum dots in the center of the quantum well. We have observed that the photoluminescence of quantum dots depends on applied voltage and light intensity. Our results were explained by the capture of minority carriers (holes) to quantum dot energy levels in the resonant conditions. We have also studied the polarized resolved photoluminescence under magnetic field applied parallel to the tunnel current. We have observed that the degree of circular polarization is voltage-dependent under low voltage and laser intensity condition. We have also observed that the degree of polarization of quantum dots tends to zero for high applied voltages. Our results show that the circular polarization depends on the injection and capture of holes by quantum dots. Finally, we observed that the circular polarization from quantum dots can be voltage and light-controlled and could be interesting for the developing of new spintronics devices.
dc.publisherUniversidade Federal de São Carlos
dc.publisherBR
dc.publisherUFSCar
dc.publisherPrograma de Pós-Graduação em Física - PPGF
dc.rightsAcesso Aberto
dc.subjectSemicondutividade e semicondutores
dc.subjectSpintrônica
dc.subjectTunelamento (Física)
dc.subjectFotoluminescência
dc.subjectDiodos
dc.subjectPontos quânticos
dc.subjectSpintronic
dc.subjectTunneling
dc.subjectPhotoluminescense
dc.subjectQuantum dots
dc.subjectDiode
dc.titlePolarização de spin em heteroestruturas semicondutoras contendo pontos quânticos de InAs
dc.typeTesis


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