Effective electronic masses in wurtzite and zinc-blende GaN and AlN

dc.creatorPersson, C.
dc.creatorSilva, A. Ferreira da
dc.creatorAhuja, Rajeev
dc.creatorJohansson, B.
dc.date.accessioned2019-05-22T15:25:45Z
dc.date.available2019-05-22T15:25:45Z
dc.date.issued2001
dc.identifier0022-0248
dc.identifierhttp://www.repositorio.ufba.br/ri/handle/ri/7669
dc.identifierv. 231, n. 3
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/2702626
dc.description.abstract
dc.languageen
dc.sourcehttp://dx.doi.org/10.1016/S0022-0248(01)01470-1
dc.subjectA1. Computer simulation
dc.subjectA1. Crystal structure
dc.subjectB1. Nitrides
dc.subjectB2. Semiconducting III???V materials
dc.titleEffective electronic masses in wurtzite and zinc-blende GaN and AlN
dc.typeArtigo de Peri??dico


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